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SN74LVC2G07DBVRG4

Texas Instruments

SN74LVC2G07DBVRG4 by Texas Instruments

SN74LVC2G07DBVRG4 by Texas Instruments is a logic gate with 3.7ns propagation delay, 50pF load capacitance, and 1.65V min supply voltage. It is used in automotive applications for open-drain output characteristics, featuring a small outline package with dual terminals and a max operating temperature of 125°C.

Median Price

$0.729

Lifecycle Status

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Texas Instruments

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Mouser Electronics

USA . 1,605 parts In-Stock

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$0.480

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$0.438

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$0.371

1,605

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$0.371

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Digiode

USA . 3,186 parts In-Stock

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Nova Conductors

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Vyrian

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Elcom Components

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Bristol Electronics

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Connector Distribution Corp

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Right Parts Inc.

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ACDS - Activité Composants Distribution Service

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Argo Parts USA

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Continental Prestige Electronics

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Corohmni

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Advanced Electronics

New Zealand . 100 parts In-Stock

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Ampacity Inc.

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Parana Technologies

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IDEA Electronic Components Group

UK . 962 parts In-Stock

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Overview

Texas Instruments Power Line Communication Winning Solution provides the flexibility of a single hardware and software design that can support multiple standards and a single global platform, reducing research and development costs and speeding time to market. This TI winning solution allows designers to easily create PLC modem systems that provide the best-performing communication platform for today's Smart Grid networks. Modern PLC networks utilize OFDM (orthogonal frequency-division multiplexing) modulation techniques to increase data throughput rates and reliability in inherently noisy environments such as electric grids. This Power Line Communication solution includes a TMS320F2806x Piccolo microcontroller that provides the power of the C28x core and CLA, couple with integrated control peripherals. The solution also features a fully integrated high-output Tx/Rx analog front end, a TPS3828-33 processor supervisory circuit, a TPS62240 step-down converter, and an SN74LVC2G07 dual buffer/driver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 3.7 ns

Low propagation delay ensures fast response and efficient operation of the logic gates.

Surface Mount: YES

Surface mount capability makes installation and integration of the logic gates easier and more efficient.

Nominal Supply Voltage / Vsup (V): 3.3

This voltage is commonly used in many electronic systems, making it a versatile choice for different applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for reliable performance even in harsh environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it a reliable choice for logic gates.

Technical Specifications

Logic Gates SN74LVC2G07DBVRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

3.7 ns

Propagation Delay (tpd):

8.6 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.6 mm

Trade Compliance

SN74LVC2G07DBVRG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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