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SN74HC132DRG4

Texas Instruments

SN74HC132DRG4 by Texas Instruments

SN74HC132DRG4 by Texas Instruments is a CMOS logic gate with 4 functions and 2 inputs. It has a propagation delay of 31 ns at 5V, making it suitable for industrial applications requiring fast response times. With a small outline package style and Schmitt trigger technology, it is ideal for surface mount designs in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 73,210 parts In-Stock

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Digiode

USA . 4,186 parts In-Stock

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Vyrian

USA . 1,932 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 390 parts In-Stock

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390

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Nova Conductors

Japan . 10 parts In-Stock

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AZTECH Wire

Italy . 835 parts In-Stock

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$8.385

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Corohmni

South Africa . 18 parts In-Stock

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$17.776

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Advanced Electronics

New Zealand . 750 parts In-Stock

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$23.982

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$21.824

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$19.665

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$23.982

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One Stop Electronics

USA . 1,146 parts In-Stock

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$24.000

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Semicontronic

India . 356 parts In-Stock

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$24.375

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Parana Technologies

USA . 2,014 parts In-Stock

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DigiPath Technology Company

USA . 1,639 parts In-Stock

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ChromeModa Solutions

Germany . 4,550 parts In-Stock

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IDEA Electronic Components Group

UK . 1,331 parts In-Stock

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Ampacity Inc.

Singapore . 238 parts In-Stock

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Microchip USA

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Perfect Parts

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Argo Parts USA

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Continental Prestige Electronics

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Corphita

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iodParts Technologies Inc.

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Bastille Electronics

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Overview

Discover the power of Texas Instruments with the SN74HC132DRG4 Logic Gates. Designed for efficiency and reliability, this product offers a seamless integration into various applications. With a focus on quality and innovation, Texas Instruments delivers a product that exceeds expectations. Whether you're designing intricate circuits or simplifying complex systems, the SN74HC132DRG4 provides the value, benefits, and advantages needed to succeed in today's competitive market. Experience superior performance and precision with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the logic gates, ensuring long-lasting performance.

Propagation Delay At Nominal Supply: 31 ns

Low propagation delay at nominal supply voltage ensures fast data processing and quick response times.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a standard 5V supply voltage, making it compatible with a wide range of electronic systems.

Schmitt Trigger: YES

Schmitt Trigger feature helps in eliminating noise and improving the stability of the input signals, enhancing the overall reliability of the logic gates.

Maximum Operating Temperature: 85 °C

High maximum operating temperature tolerance ensures reliability in various environmental conditions, making it suitable for industrial applications.

Technical Specifications

Logic Gates SN74HC132DRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

5.2 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

31 ns

Propagation Delay (tpd):

156 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.75 mm

Sub-Category:

Gate

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

SN74HC132DRG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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