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SN74LVC1G07DCKR

Texas Instruments

SN74LVC1G07DCKR by Texas Instruments

SN74LVC1G07DCKR by Texas Instruments is a CMOS logic gate with 4.7 ns propagation delay at 3.3V, suitable for automotive applications. It features open-drain output, operates b/w -40 to 125 °C, and has a max supply voltage of 5.5V. This small-outline package with dual terminals is ideal for surface-mount designs requiring fast signal processing.

Median Price

$0.100

Lifecycle Status

Suppliers In-Stock

53

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 383,896 parts In-Stock

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DigiKey

USA . 362 parts In-Stock

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Arrow

USA . 248 parts In-Stock

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Verical

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Rochester

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Chip1Stop

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Maritex

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IBS Electronics

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Modulus Dynamics

Lithuania . 2,068 parts In-Stock

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Parana Technologies

USA . 1,187 parts In-Stock

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DigiPath Technology Company

USA . 2,353 parts In-Stock

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Germany . 3,685 parts In-Stock

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IDEA Electronic Components Group

UK . 1,151 parts In-Stock

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GreenTree Electronics

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Overview

Unlock the power of seamless logic operations with the Texas Instruments SN74LVC1G07DCKR. Crafted with precision and expertise, this high-quality logic gate from a trusted manufacturer offers unparalleled performance and reliability. Ideal for a wide range of applications, this product provides customers with exceptional value, fast propagation delays, and low power consumption. Experience the benefits of efficient signal processing and streamlined circuit design with the SN74LVC1G07DCKR, setting new standards in logic gate technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and resistance to external elements, making the product suitable for various environments.

Propagation Delay at Nominal Supply: 4.7 ns

Low propagation delay ensures fast signal processing, making this logic gate efficient for time-critical applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient assembly on circuit boards, saving space and simplifying manufacturing processes.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a common supply voltage of 3.3V, suitable for integration into various electronic systems.

Output Characteristics: OPEN-DRAIN

Open-drain output configuration enables connection to external pull-up resistors, providing flexibility in signal interfacing.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, enhancing overall performance and reliability.

Maximum Operating Temperature: 125 °C

Withstands high temperatures of up to 125°C, making it suitable for demanding industrial or automotive applications.

Technical Specifications

Logic Gates SN74LVC1G07DCKR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

4.7 ns

Propagation Delay (tpd):

8.6 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

SN74LVC1G07DCKR Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-618-8899, 5962016188899

NIIN

016188899

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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