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M74VHC1GT08DFT1G

Onsemi

M74VHC1GT08DFT1G by Onsemi

M74VHC1GT08DFT1G by Onsemi is a logic gate with 2 inputs, 3.3V nominal voltage, and 11ns propagation delay. It is used in applications requiring fast signal processing and operates within a temperature range of -55 to 125°C. The package style is small outline with thin profile, making it suitable for compact electronic designs.

Median Price

$0.306

Lifecycle Status

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16

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1k+

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DigiKey

USA . 24,000 parts In-Stock

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Farnell

UK . 2,870 parts In-Stock

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Element14

Singapore . 2,870 parts In-Stock

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$0.560

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$0.549

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$0.525

2,870

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$0.560

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$0.525

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Flip Electronics

USA . 24,000 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Chip Stock

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Vyrian

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Cyclops Electronics Ltd

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Prism Electronics

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Bristol Electronics

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Sea View Technologies

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Quantum Digital Technology

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Digiode

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Infinite Electronics LLP

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ComSIT Distribution GmbH

Germany . 147 parts In-Stock

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Speed Components Ltd

Israel . 130 parts In-Stock

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Semicontronic

India . 9,565 parts In-Stock

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Ampacity Inc.

Singapore . 9,416 parts In-Stock

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Corohmni

South Africa . 180 parts In-Stock

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Advanced Electronics

New Zealand . 3,316 parts In-Stock

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$0.069

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Argo Parts USA

USA . 2,550 parts In-Stock

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$0.093

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Continental Prestige Electronics

USA . 1,614 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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Microchip USA

USA . 405 parts In-Stock

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$0.386

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Aztec Data Supply Inc.

USA . 1,008 parts In-Stock

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Lixinc

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TANS Electronics

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SupplyDigital Components

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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Kepictronics

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Kulean Microsystems

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Problanco Electronics

Mexico . 1,285 parts In-Stock

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iodParts Technologies Inc.

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Corphita

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Futuretech Components

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ChipTracer

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UHIMA Technologies

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Overview

Unleash the power of seamless logic gates with the M74VHC1GT08DFT1G by Onsemi. Designed for reliability and precision, this small outline, thin profile device offers a versatile solution for various applications. With a maximum operating temperature of 125°C and a wide supply voltage range of 3.3V to 5.5V, this logic gate is a game-changer in the industry. Trust in Onsemi's expertise in semiconductor technology and elevate your projects with the unmatched performance of the M74VHC1GT08DFT1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for portable devices.

Propagation Delay At Nominal Supply: 11 ns

With a fast propagation delay, this logic gate is suitable for high-speed applications where quick response times are critical.

Surface Mount: YES

Being surface mountable, this product is easy to assemble onto circuit boards, saving space and simplifying the manufacturing process.

No. of Inputs: 2

With 2 inputs, this logic gate can perform basic logical operations efficiently, making it versatile for various circuit designs.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V, this logic gate is energy-efficient and compatible with a wide range of electronic systems.

Load Capacitance (CL): 50 pF

The low load capacitance of 50pF ensures stable signal transmission and minimal interference in the circuit.

Power Supplies (V): 3.3/5

This logic gate can accept power supplies of 3.3V or 5V, providing flexibility in system design and compatibility with different voltage requirements.

Technical Specifications

Logic Gates M74VHC1GT08DFT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3/5

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay At Nominal Supply:

11 ns

Propagation Delay (tpd):

16.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

1.25 mm

Trade Compliance

M74VHC1GT08DFT1G Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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