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M74VHC1GT86DTT1G

Onsemi

M74VHC1GT86DTT1G by Onsemi

M74VHC1GT86DTT1G by Onsemi is a logic gate with 2 inputs, 12 ns propagation delay at 3.3V, and 50 pF load capacitance. It is a CMOS technology component suitable for military-grade applications due to its wide operating temperature range of -55 to 125 °C. This surface-mount package has a small outline, thin profile, and shrink pitch design for compact electronic systems.

Median Price

$0.254

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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EBV Elektronik

Germany . 12,000 parts In-Stock

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Nova Conductors

Japan . 27 parts In-Stock

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$0.109

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Flip Electronics

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Vyrian

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Goldney Electronics S.L.

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Digiode

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Netroflash

USA . 2,000 parts In-Stock

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$0.109

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$0.104

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$0.101

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Microchip USA

USA . 5,688 parts In-Stock

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$0.636

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AZTECH Wire

Italy . 1,189 parts In-Stock

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$10.610

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Aztec Data Supply Inc.

USA . 1,763 parts In-Stock

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$12.890

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$21.818

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$20.728

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Semicontronic

India . 11,936 parts In-Stock

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$33.000

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$32.175

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$32.010

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Ampacity Inc.

Singapore . 11,567 parts In-Stock

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Lixinc

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Problanco Electronics

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TANS Electronics

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SupplyDigital Components

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Argo Parts USA

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Continental Prestige Electronics

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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Kulean Microsystems

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Alle Elektronik GmbH

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Corphita

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iodParts Technologies Inc.

India . 900 parts In-Stock

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UHIMA Technologies

Türkiye . 886 parts In-Stock

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Futuretech Components

Singapore . 405 parts In-Stock

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Corohmni

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Overview

Enhance your next project with the M74VHC1GT86DTT1G by Onsemi, a top-quality logic gate designed to deliver optimal performance and reliability. Manufactured by Onsemi, a leader in semiconductor technology, this product boasts a range of applications in various industries. With a fast propagation delay and low power consumption, this logic gate offers exceptional value and efficiency to customers seeking high-performance components for their projects. Upgrade your designs with the M74VHC1GT86DTT1G and experience the superior quality and benefits that Onsemi products have to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used in electronic components due to its durability and reliability.

Propagation Delay At Nominal Supply: 12 ns

Low propagation delay ensures fast operation and high-speed performance.

Surface Mount: YES

Surface-mount technology allows for compact, efficient PCB design.

No. of Inputs: 2

Suitable for basic logic operations with multiple input signals.

Nominal Supply Voltage / Vsup (V): 3.3

Compatible with common supply voltages, suitable for a wide range of applications.

Load Capacitance (CL): 50 pF

Optimized for driving capacitive loads without sacrificing performance.

Power Supplies (V): 3.3/5

Can operate with multiple power supply voltages, offering flexibility in design.

Maximum I (ol): 8 Amp

High output current capability allows for driving external components or loads.

Maximum Operating Temperature: 125 °C

Suitable for operation in harsh environmental conditions.

Minimum Operating Temperature: -55 °C

Can withstand low temperature conditions, making it versatile in various settings.

Terminal Finish: MATTE TIN

Provides good solderability and corrosion resistance for long-term reliability.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Technical Specifications

Logic Gates M74VHC1GT86DTT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3/5

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

12 ns

Propagation Delay (tpd):

19.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.5 mm

Trade Compliance

M74VHC1GT86DTT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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