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M74VHC1G132DFT2G

Onsemi

M74VHC1G132DFT2G by Onsemi

M74VHC1G132DFT2G by Onsemi is a CMOS logic gate with 2 inputs, 12.3 ns propagation delay, and 50 pF load capacitance. It operates at a supply voltage range of 2-5.5 V and has a max operating temperature of 125°C. Ideal for military-grade applications requiring fast signal processing in compact designs.

Median Price

$0.043

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Rochester

USA . 49 parts In-Stock

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$0.043

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$0.036

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Digiode

USA . 1,807 parts In-Stock

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Nova Conductors

Japan . 82 parts In-Stock

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Sensible Micro Corp

USA . 27,560 parts In-Stock

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Chip Stock

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Vyrian

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Bristol Electronics

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Atlantic Semiconductor

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Speed Components Ltd

Israel . 287 parts In-Stock

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Ampacity Inc.

Singapore . 49 parts In-Stock

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$0.037

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Semicontronic

India . 49 parts In-Stock

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Corphita

USA . 1,279 parts In-Stock

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$0.039

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Corohmni

South Africa . 417 parts In-Stock

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Argo Parts USA

USA . 2,314 parts In-Stock

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$0.084

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Continental Prestige Electronics

USA . 815 parts In-Stock

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Microchip USA

USA . 426 parts In-Stock

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$0.389

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AZTECH Wire

Italy . 795 parts In-Stock

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$6.577

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Aztec Data Supply Inc.

USA . 2,399 parts In-Stock

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Perfect Parts

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iodParts Technologies Inc.

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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Lixinc

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TANS Electronics

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Problanco Electronics

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SupplyDigital Components

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Robosynatics

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Lucentia Tech

USA . 1,895 parts In-Stock

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UHIMA Technologies

Türkiye . 714 parts In-Stock

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Kulean Microsystems

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Netroflash

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Overview

Discover the M74VHC1G132DFT2G by Onsemi, a top-quality logic gate that promises reliability and performance. Manufactured by Onsemi, a trusted leader in semiconductor technology, this product offers exceptional value and benefits to customers in various applications. With a nominal supply voltage of 3V and a propagation delay of 12.3 ns, this logic gate is perfect for your next project. From its small outline package to its Schmitt trigger technology, this product delivers the advantages you need for seamless integration and reliable operation. Choose the M74VHC1G132DFT2G for superior quality and performance that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and helps in protecting the internal components of the logic gate from external environmental factors.

Propagation Delay At Nominal Supply: 12.3 ns

Low propagation delay ensures fast operation and high-speed data processing, making this logic gate suitable for time-sensitive applications.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying the overall design of electronic devices.

Nominal Supply Voltage / Vsup (V): 3

Compatible with a standard 3V power supply, making it versatile and widely applicable to various electronic systems.

Minimum Operating Temperature: -55 °C

Wide temperature range ensures the logic gate can function reliably in extreme cold conditions, suitable for use in harsh environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this logic gate energy-efficient and reliable for digital signal processing.

Technical Specifications

Logic Gates M74VHC1G132DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

12.3 ns

Propagation Delay (tpd):

19.6 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

M74VHC1G132DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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