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M74VHC1G132DFT1G

Onsemi

M74VHC1G132DFT1G by Onsemi

M74VHC1G132DFT1G by Onsemi is a CMOS Logic Gate with 2 inputs, 12.3 ns propagation delay at 3V. It operates in temperature range -55 to 125 °C and has a load capacitance of 50 pF. Ideal for military-grade applications requiring fast signal processing in compact designs.

Median Price

$2.295

Lifecycle Status

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Nova Conductors

Japan . 50 parts In-Stock

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Classic Components Corporation

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Vyrian

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Digiode

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Micros

Poland . 300 parts In-Stock

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Partservice

France . 300 parts In-Stock

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$3.589

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Micros sp.j. W. Kędra i J. Lic

Poland . 300 parts In-Stock

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Sea View Technologies

USA . 95 parts In-Stock

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Bristol Electronics

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Atlantic Semiconductor

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Continental Prestige Electronics

USA . 5,660 parts In-Stock

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$0.229

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Argo Parts USA

USA . 2,789 parts In-Stock

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Microchip USA

USA . 464 parts In-Stock

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$0.365

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Corohmni

South Africa . 475 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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$0.980

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Ampacity Inc.

Singapore . 532 parts In-Stock

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Modulus Dynamics

Lithuania . 1,227 parts In-Stock

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AZTECH Wire

Italy . 345 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,473 parts In-Stock

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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Semicontronic

India . 961 parts In-Stock

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Perfect Parts

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RC Electronics

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iodParts Technologies Inc.

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Lixinc

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Authorized Procurement Solutions

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Alle Elektronik GmbH

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UHIMA Technologies

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Lucentia Tech

USA . 100 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the M74VHC1G132DFT1G logic gate by Onsemi. Crafted with precision and excellence, this product offers seamless integration and superior performance in various applications. Whether you're looking to enhance your electronics projects or streamline your industrial processes, this logic gate delivers unmatched value and efficiency. Trust Onsemi to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your creations with the M74VHC1G132DFT1G - the perfect choice for all your logic gate requirements.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides durability and protection to the internal components of the logic gate, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 12.3 ns

Low propagation delay ensures fast signal processing, making this logic gate suitable for applications that require quick response times.

Surface Mount: YES

Surface mount capability allows for easy and convenient integration onto circuit boards, saving space and minimizing assembly time.

No. of Inputs: 2

Having two inputs provides flexibility in designing logic circuits, allowing for different input configurations.

Nominal Supply Voltage / Vsup (V): 3

Operates at a common supply voltage, making it compatible with a wide range of electronic devices and systems.

Load Capacitance (CL): 50 pF

Suitable for driving moderate capacitive loads, ensuring stable and reliable performance in various applications.

Maximum Operating Temperature: 125 °C

High temperature tolerance allows this logic gate to function reliably in harsh operating environments without overheating.

Minimum Operating Temperature: -55 °C

Wide temperature range enables this logic gate to operate efficiently in both low and high temperature conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this logic gate energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates M74VHC1G132DFT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

12.3 ns

Propagation Delay (tpd):

19.6 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

M74VHC1G132DFT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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