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M74VHC1GT04DTT1G

Onsemi

M74VHC1GT04DTT1G by Onsemi

M74VHC1GT04DTT1G by Onsemi is a CMOS logic gate with 3.3/5 V power supplies, 14.5 ns propagation delay, and 8 Amp max I (ol). It is ideal for military-grade applications requiring fast signal processing in compact spaces due to its small outline package style and thin profile design.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

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Arrow

USA . 290 parts In-Stock

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$0.369

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DigiKey

USA . 18,137 parts In-Stock

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$0.480

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$0.176

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Mouser Electronics

USA . 5,743 parts In-Stock

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Farnell

UK . 319 parts In-Stock

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Chip1Stop

Japan . 290 parts In-Stock

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Verical

USA . 267 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Digiode

USA . 1,978 parts In-Stock

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Forefront Electronics and Design

USA . 36 parts In-Stock

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$0.490

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Flip Electronics

USA . 64,714 parts In-Stock

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Chip Stock

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Zilex Electronics Inc.

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Vyrian

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Dan-Mar Components

USA . 4,298 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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$0.131

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$0.079

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First Choice Components Inc.

USA . 2,837 parts In-Stock

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Sunrise Surplus Inc.

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Quantum Digital Technology

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Halfin

Belgium . 1,373 parts In-Stock

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Ampacity Inc.

Singapore . 4,679 parts In-Stock

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$0.065

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Semicontronic

India . 4,498 parts In-Stock

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$0.065

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Corohmni

South Africa . 235 parts In-Stock

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Advanced Electronics

New Zealand . 150 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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Corphita

USA . 2,091 parts In-Stock

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Microchip USA

USA . 5,937 parts In-Stock

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Aztec Data Supply Inc.

USA . 288 parts In-Stock

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Perfect Parts

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RC Electronics

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Problanco Electronics

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Kulean Microsystems

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Lixinc

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Argo Parts USA

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Continental Prestige Electronics

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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Alle Elektronik GmbH

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TANS Electronics

Latvia . 598 parts In-Stock

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UHIMA Technologies

Türkiye . 47 parts In-Stock

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Overview

Discover the M74VHC1GT04DTT1G by Onsemi, a top-quality Logic Gates product that offers exceptional performance and reliability. Manufactured by Onsemi, a renowned name in the industry, this product is perfect for a wide range of applications. With a nominal supply voltage of 3V, maximum Iol of 8 Amp, and propagation delay of 14.5 ns, this product ensures efficient operation. Experience the value of precision engineering and advanced technology with the M74VHC1GT04DTT1G, delivering unparalleled benefits and advantages to customers seeking top-tier performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gates, ensuring reliability and longevity.

Load Capacitance (CL): 50 pF

The low load capacitance ensures fast signal propagation and minimal delay, making these logic gates suitable for high-speed operations.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, these logic gates can withstand elevated environmental conditions, making them ideal for various industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making these logic gates energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates M74VHC1GT04DTT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3/5

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay (tpd):

14.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.5 mm

Trade Compliance

M74VHC1GT04DTT1G Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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