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SN74LVC1G11DCKR

Texas Instruments

SN74LVC1G11DCKR by Texas Instruments

SN74LVC1G11DCKR by Texas Instruments is a CMOS Logic Gate with 3 inputs, 4.9 ns propagation delay, and 17.2 ns propagation delay at nominal voltage of 3.3V. It is used in automotive applications due to its small outline package style and thin profile design, making it suitable for space-constrained environments while providing reliable performance under extreme temperature conditions.

Median Price

$0.123

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1k+

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Texas Instruments

USA . 1,357,257 parts In-Stock

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Arrow

USA . 598 parts In-Stock

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Newark

USA . 30 parts In-Stock

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Mouser Electronics

USA . 132,989 parts In-Stock

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DigiKey

USA . 63,501 parts In-Stock

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Chip1Stop

Japan . 15,000 parts In-Stock

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Element14

Singapore . 5,570 parts In-Stock

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Farnell

UK . 4,025 parts In-Stock

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Verical

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Distributors (In-Stock)

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DF Sales Co.

USA . 910 parts In-Stock

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Nova Conductors

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TME

Poland . 438 parts In-Stock

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Chip Stock

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Component Sense

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Classic Components Corporation

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Semicontronic

India . 173,199 parts In-Stock

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Ampacity Inc.

Singapore . 173,198 parts In-Stock

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Argo Parts USA

USA . 4,581 parts In-Stock

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Continental Prestige Electronics

USA . 2,221 parts In-Stock

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Corphita

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Bastille Electronics

Australia . 74 parts In-Stock

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Microchip USA

USA . 5,347 parts In-Stock

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Corohmni

South Africa . 59 parts In-Stock

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Advanced Electronics

New Zealand . 750 parts In-Stock

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Parana Technologies

USA . 1,958 parts In-Stock

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DigiPath Technology Company

USA . 2,033 parts In-Stock

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ChromeModa Solutions

Germany . 5,192 parts In-Stock

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IDEA Electronic Components Group

UK . 1,669 parts In-Stock

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$29.733

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Technoshack Inc. (Excess)

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Lixinc

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GreenTree Electronics

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Kepictronics

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Germany . 6,603 parts In-Stock

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ChipstoGo Electronic ltd

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Speed Components Ltd (Excess)

Israel . 4,095 parts In-Stock

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Robosynatics

Brazil . 3,363 parts In-Stock

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Lucentia Tech

USA . 3,363 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Overview

Enhance your electronic projects with the SN74LVC1G11DCKR by Texas Instruments! As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and reliability. This logic gate is perfect for a wide range of applications, offering fast propagation delay and low power consumption. With its compact design and high performance, this product provides exceptional value and benefits to customers looking for efficient and effective solutions. Upgrade your projects today with the SN74LVC1G11DCKR and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this logic gate lightweight and durable.

Propagation Delay At Nominal Supply: 4.9 ns

With a low propagation delay, this logic gate can process signals quickly and efficiently.

Surface Mount: YES

Being surface mountable makes this logic gate easy to integrate into the circuit board and saves space.

No. of Inputs: 3

With 3 inputs, this logic gate can perform more complex operations and calculations.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a supply voltage of 3.3V makes this logic gate suitable for a wide range of applications.

Load Capacitance (CL): 50 pF

The low load capacitance ensures that this logic gate can drive capacitive loads without performance degradation.

Power Supplies (V): 3.3

With a nominal supply voltage of 3.3V, this logic gate is energy-efficient and cost-effective to operate.

No. of Terminals: 6

The 6 terminals allow for easy connectivity and integration of this logic gate into the circuit.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The compact and slim package style saves space on the circuit board and allows for high-density board design.

Maximum I (ol): 32 Amp

The high output current capability of 32A allows this logic gate to drive heavy loads without overheating.

Propagation Delay (tpd): 17.2 ns

The short propagation delay of 17.2 ns ensures fast signal processing and high-speed operation.

Maximum Operating Temperature: 125 °C

Operating at up to 125°C, this logic gate is suitable for high-temperature environments, such as automotive applications.

Output Characteristics: 3-STATE

The 3-state output allows this logic gate to have a third high impedance state, providing flexibility in the circuit design.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this logic gate can function in extreme cold conditions.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The nickel/palladium/gold terminal finish ensures reliable and long-lasting connectivity.

Terminal Position: DUAL

The dual terminal position offers multiple options for mounting and connecting the logic gate in the circuit.

Maximum Seated Height: 1.1 mm

The low seated height of 1.1mm minimizes the overall height of the circuit board, ideal for slim applications.

Width: 1.25 mm

With a compact width of 1.25mm, this logic gate fits into tight spaces on the circuit board.

Minimum Supply Voltage (Vsup): 1.65 V

Operating at a minimum supply voltage of 1.65V ensures compatibility with low-power applications.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this logic gate can withstand the soldering process during assembly.

Length: 2 mm

The short length of 2mm allows for efficient use of space on the circuit board, saving valuable board real estate.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this logic gate meets stringent temperature and performance requirements.

Technology: CMOS

The CMOS technology used in this logic gate offers low power consumption and high noise immunity.

Terminal Form: GULL WING

The gull wing terminal form provides secure solder connections and easy handling during assembly.

Packing Method: TR

The TR packing method ensures safe and convenient transportation and storage of this logic gate.

Terminal Pitch: 0.65 mm

With a terminal pitch of 0.65mm, this logic gate offers precise and compact terminal spacing for easy mounting.

Maximum Supply Voltage (Vsup): 5.5 V

Operating at a maximum supply voltage of 5.5V allows this logic gate to handle a wide range of power supply levels.

Maximum Power Supply Current (ICC): 0.01 mA

The low maximum power supply current of 0.01mA ensures energy efficiency and prevents overheating.

Technical Specifications

Logic Gates SN74LVC1G11DCKR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

3

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

4.9 ns

Propagation Delay (tpd):

17.2 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

SN74LVC1G11DCKR Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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