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SN74LVC2G17DBVR

Texas Instruments

SN74LVC2G17DBVR by Texas Instruments

SN74LVC2G17DBVR by Texas Instruments is a logic gate with 2 functions, featuring a propagation delay of 5.4 ns at 3.3V supply voltage. This CMOS technology device operates in automotive-grade temperatures and has a small outline package for surface mounting applications. With Schmitt trigger functionality, it is ideal for high-speed signal processing in various electronic circuits.

Median Price

$0.179

Lifecycle Status

Suppliers In-Stock

34

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1k+

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Arrow

USA . 153 parts In-Stock

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Chip1Stop

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Mouser Electronics

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RS (Exports)

UK . 4,300 parts In-Stock

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Verical

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Ozdisan Elektronik

Türkiye . 19,760 parts In-Stock

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$0.053

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Nova Conductors

Japan . 50 parts In-Stock

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Digiode

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Forefront Electronics and Design

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Maritex

Poland . 9,000 parts In-Stock

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Component Electronics Inc.

Canada . 218 parts In-Stock

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Connect4Technologies Inc.

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Component Sense

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NAC Semi

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Cyclops Electronics Ltd

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Ampacity Inc.

Singapore . 37,814 parts In-Stock

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Semicontronic

India . 35,061 parts In-Stock

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Continental Prestige Electronics

USA . 5,682 parts In-Stock

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Argo Parts USA

USA . 3,512 parts In-Stock

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Corphita

USA . 4,719 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 163 parts In-Stock

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Modulus Dynamics

Lithuania . 585 parts In-Stock

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Parana Technologies

USA . 1,015 parts In-Stock

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DigiPath Technology Company

USA . 1,897 parts In-Stock

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ChromeModa Solutions

Germany . 2,127 parts In-Stock

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IDEA Electronic Components Group

UK . 487 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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S.R.D Solutions

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iodParts Technologies Inc.

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Component Connect

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Kepictronics

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Lixinc

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Robosynatics

Brazil . 2,991 parts In-Stock

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Lucentia Tech

USA . 2,991 parts In-Stock

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Computer Components Inc. - USA

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Cyclops Electronics Ltd (Excess)

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Netroflash

USA . 1,000 parts In-Stock

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Overview

Enhance your electronic projects with the Texas Instruments SN74LVC2G17DBVR Logic Gates. Known for their superior quality and reliability, Texas Instruments products are trusted by professionals worldwide. This versatile component is perfect for a wide range of applications, offering fast propagation delay and low power consumption. Whether you're working on automotive electronics or consumer devices, this logic gate will deliver exceptional performance and efficiency. Upgrade your designs with the SN74LVC2G17DBVR and experience the difference that Texas Instruments can make in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable electronic devices.

Propagation Delay At Nominal Supply: 5.4 ns

With a fast propagation delay, this logic gate allows for quick signal processing, making it suitable for high-speed applications.

Surface Mount: YES

Being surface mountable allows for easy integration onto circuit boards, saving space and simplifying assembly processes.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a common supply voltage of 3.3V makes it compatible with standard electrical systems and components.

Schmitt Trigger: YES

The inclusion of a Schmitt trigger allows for noise immunity and hysteresis, improving the stability and reliability of digital signal processing.

Technology: CMOS

Using CMOS technology results in lower power consumption and higher noise immunity, making the logic gate efficient and reliable.

Technical Specifications

Logic Gates SN74LVC2G17DBVR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

5.4 ns

Propagation Delay (tpd):

9.8 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.6 mm

Trade Compliance

SN74LVC2G17DBVR Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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