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SN74LVC1G06DCKR

Texas Instruments

SN74LVC1G06DCKR by Texas Instruments

SN74LVC1G06DCKR by Texas Instruments is a CMOS logic gate with 4.5 ns propagation delay, operating at 3.3V. It features open-drain output and Schmitt Trigger technology, suitable for automotive applications due to its wide temperature range of -40 to 125°C. This small outline package has a thin profile and shrink pitch, making it ideal for surface mount designs with a load capacitance of 50 pF.

Median Price

$0.056

Lifecycle Status

Suppliers In-Stock

46

In-Stock Inventory

1k+

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Mouser Electronics

USA . 34,972 parts In-Stock

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Element14

Singapore . 11,160 parts In-Stock

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DigiKey

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Farnell

UK . 11,160 parts In-Stock

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Verical

USA . 2,420 parts In-Stock

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Chip1Stop

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Digiode

USA . 3,723 parts In-Stock

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TME

Poland . 2,758 parts In-Stock

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Forefront Electronics and Design

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Ampacity Inc.

Singapore . 26,377 parts In-Stock

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Semicontronic

India . 23,615 parts In-Stock

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Corohmni

South Africa . 51 parts In-Stock

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Argo Parts USA

USA . 3,577 parts In-Stock

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Corphita

USA . 739 parts In-Stock

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$0.090

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Continental Prestige Electronics

USA . 2,945 parts In-Stock

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$0.299

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$0.113

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Netroflash

USA . 50 parts In-Stock

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$1.000

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$0.950

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$14.938

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$13.594

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$12.249

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Parana Technologies

USA . 906 parts In-Stock

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$22.439

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ChromeModa Solutions

Germany . 3,570 parts In-Stock

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$20.674

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IDEA Electronic Components Group

UK . 671 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

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Germany . 1,770 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 710 parts In-Stock

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Overview

Enhance your electronic designs with the SN74LVC1G06DCKR by Texas Instruments, a high-quality logic gate that delivers exceptional performance and reliability. From its durable plastic/epoxy package body material to its advanced CMOS technology, this component is designed for optimal functionality in a wide range of applications. With a fast propagation delay, low power consumption, and a wide temperature range, this logic gate offers unmatched value and benefits to customers looking for superior quality components. Trust Texas Instruments for cutting-edge solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - Provides durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply

4.5 ns - Offers fast response time for input signals, ensuring efficient operation.

Surface Mount

Allows for easy and convenient installation on circuit boards.

Nominal Supply Voltage / Vsup (V)

1.8 - Low supply voltage requirement helps reduce power consumption.

Load Capacitance (CL)

50 pF - Suitable for driving moderate loads in electronic circuits.

Power Supplies (V)

3.3 - Compatible with common power supply voltages in electronic applications.

No. of Terminals

5 - Provides multiple connection points for interfacing with other components.

Terminal Finish

Nickel/Palladium/Gold (Ni/Pd/Au) - Ensures good electrical conductivity and corrosion resistance.

Technology

CMOS - Utilizes low power consumption and high noise immunity characteristics.

Maximum Seated Height

1.1 mm - Compact design for space-constrained applications.

Technical Specifications

Logic Gates SN74LVC1G06DCKR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

4.5 ns

Propagation Delay (tpd):

7 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

SN74LVC1G06DCKR Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-618-8902, 5962016188902

NIIN

016188902

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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