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SN74LVC1G08DBV

Texas Instruments

SN74LVC1G08DBV by Texas Instruments

SN74LVC1G08DBV by Texas Instruments is a CMOS logic gate with 2 inputs, 8 ns propagation delay, and operates b/w -40 to 85 °C. It is a small outline package suitable for industrial applications requiring fast signal processing in tight spaces. The device supports supply voltages from 1.65V to 5.5V and features a low profile design with nickel palladium gold finish for reliable performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Vyrian

USA . 3,546 parts In-Stock

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Digiode

USA . 1,617 parts In-Stock

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LWI Electronics Inc

India . 640 parts In-Stock

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640

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Speed Components Ltd

Israel . 226 parts In-Stock

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A2Z Electronics, Inc.

USA . 145 parts In-Stock

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Prism Electronics

USA . 105 parts In-Stock

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Nova Conductors

Japan . 86 parts In-Stock

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North Shore Components

USA . 14 parts In-Stock

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Corohmni

South Africa . 226 parts In-Stock

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$8.614

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AZTECH Wire

Italy . 437 parts In-Stock

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$11.808

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Parana Technologies

USA . 1,642 parts In-Stock

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$15.094

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DigiPath Technology Company

USA . 1,980 parts In-Stock

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ChromeModa Solutions

Germany . 6,401 parts In-Stock

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IDEA Electronic Components Group

UK . 214 parts In-Stock

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One Stop Electronics

USA . 1,229 parts In-Stock

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Advanced Electronics

New Zealand . 37 parts In-Stock

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Ampacity Inc.

Singapore . 157 parts In-Stock

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Semicontronic

India . 349 parts In-Stock

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Continental Prestige Electronics

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Infinite Electronics LLP (Excess)

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Formix International (Excess)

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Corphita

USA . 3,853 parts In-Stock

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Lixinc

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Argo Parts USA

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Bastille Electronics

Australia . 800 parts In-Stock

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the SN74LVC1G08DBV logic gate. This innovative product offers a wide range of applications in various industries, providing customers with unparalleled value and performance. With its compact design and advanced technology, this logic gate delivers fast propagation delay and operates efficiently in industrial-grade temperatures. Trust Texas Instruments for superior products that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: Plastic/Epoxy

Provides durability and protection, making it suitable for various environments.

Surface Mount: Yes

Allows for easy installation on circuit boards, saving space and reducing assembly time.

No. of Inputs: 2

Provides flexibility in designing logic circuits with multiple input combinations.

Nominal Supply Voltage / Vsup (V): 3.3

Compatible with standard power sources, ensuring reliable performance.

Propagation Delay (tpd): 8 ns

Provides fast response times for logic operations, enhancing overall circuit efficiency.

Technology: CMOS

Utilizes low power consumption and offers high noise immunity, ideal for battery-powered applications.

Technical Specifications

Logic Gates SN74LVC1G08DBV attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Propagation Delay (tpd):

8 ns

Maximum Seated Height:

1.45 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Width:

1.6 mm

Trade Compliance

SN74LVC1G08DBV Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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