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SN74AHCT1G08DBVR

Texas Instruments

SN74AHCT1G08DBVR by Texas Instruments

SN74AHCT1G08DBVR by Texas Instruments is a logic gate with 2 inputs, 9 ns propagation delay at 5V. It operates in a temperature range of -40 to 125 °C and has a load capacitance of 50 pF. Ideal for automotive applications due to its small outline package and low power consumption.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

56

In-Stock Inventory

1k+

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Rochester

USA . 50,316 parts In-Stock

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Texas Instruments

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DigiKey

USA . 111,555 parts In-Stock

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Mouser Electronics

USA . 37,477 parts In-Stock

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Newark

USA . 12,047 parts In-Stock

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Arrow

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Farnell

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Element14

Singapore . 8,813 parts In-Stock

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Chip1Stop

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Verical

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Avnet

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Nova Conductors

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TME

Poland . 5,355 parts In-Stock

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Bristol Electronics

USA . 14,540 parts In-Stock

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Maritex

Poland . 15,865 parts In-Stock

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DF Sales Co.

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Ampacity Inc.

Singapore . 140,290 parts In-Stock

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Semicontronic

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CoreStaff

Japan . 87 parts In-Stock

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Corphita

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Continental Prestige Electronics

USA . 33,750 parts In-Stock

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$0.379

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Microchip USA

USA . 4,187 parts In-Stock

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Advanced Electronics

New Zealand . 10 parts In-Stock

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Parana Technologies

USA . 11 parts In-Stock

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DigiPath Technology Company

USA . 1,627 parts In-Stock

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IDEA Electronic Components Group

UK . 1,052 parts In-Stock

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ChromeModa Solutions

Germany . 228 parts In-Stock

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Corohmni

South Africa . 299 parts In-Stock

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Overview

Enhance the performance of your electronic designs with the SN74AHCT1G08DBVR Logic Gate from Texas Instruments. Known for their exceptional quality and reliability, Texas Instruments offers cutting-edge solutions for a wide range of applications. This small outline, low profile package is ideal for automotive-grade projects, providing a fast propagation delay of just 9ns and a 3-STATE output characteristic. With a nominal supply voltage of 5V and a maximum power supply current of only 0.01mA, this logic gate delivers outstanding value and efficiency to customers seeking top-notch performance in their designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the logic gates, ensuring long-lasting performance.

Propagation Delay At Nominal Supply: 9 ns

The low propagation delay of 9 ns at nominal supply voltage ensures fast operation and reliable signal processing.

Surface Mount: YES

Surface mount capability allows for easy integration on circuit boards, saving space and facilitating efficient assembly processes.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes it compatible with various electronic systems and power sources.

Output Characteristics: 3-STATE

3-state output design provides additional flexibility in controlling the logic levels, enhancing the versatility of the product.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the logic gates energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates SN74AHCT1G08DBVR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHCT/VHCT/VT

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

9 ns

Propagation Delay (tpd):

9 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.6 mm

Trade Compliance

SN74AHCT1G08DBVR Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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