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SN74LVC1G17DCKRE4

Texas Instruments

SN74LVC1G17DCKRE4 by Texas Instruments

SN74LVC1G17DCKRE4 by Texas Instruments is a CMOS logic gate with 5.5 ns propagation delay at 3.3V, suitable for automotive applications. It features Schmitt Trigger technology, operates b/w -40 to 125 °C, and has a small outline package style.

Median Price

$0.670

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 9,398 parts In-Stock

1+ parts

$0.670

100+ parts

$0.366

1k+ parts

$0.317

10k+ parts

$0.269

9,398

$0.670

$0.366

$0.317

$0.269

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 32 parts In-Stock

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$0.155

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32

$0.155

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Digiode

USA . 3,303 parts In-Stock

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$0.342

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3,303

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Chip Stock

USA . 654,880 parts In-Stock

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Vyrian

USA . 16,773 parts In-Stock

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16,773

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Distributors (Availability)

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Corohmni

South Africa . 833 parts In-Stock

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$0.155

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833

$0.155

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Continental Prestige Electronics

USA . 6,311 parts In-Stock

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$0.155

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$0.152

6,311

$0.155

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$0.152

Argo Parts USA

USA . 4,423 parts In-Stock

1+ parts

$0.155

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$0.150

4,423

$0.155

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Netroflash

USA . 2,000 parts In-Stock

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$0.155

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$0.152

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$0.155

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$0.160

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$0.152

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$0.152

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2,500

$0.160

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Modulus Dynamics

Lithuania . 100 parts In-Stock

1+ parts

$0.172

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$0.170

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$0.165

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100

$0.172

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Corphita

USA . 61 parts In-Stock

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$0.324

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61

$0.324

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Ampacity Inc.

Singapore . 16,780 parts In-Stock

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$0.442

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16,780

$0.442

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Semicontronic

India . 16,588 parts In-Stock

1+ parts

$0.442

100+ parts

$0.431

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$0.429

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16,588

$0.442

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$0.429

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Parana Technologies

USA . 1,476 parts In-Stock

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$11.553

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$11.962

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1,476

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DigiPath Technology Company

USA . 896 parts In-Stock

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$12.721

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$11.704

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896

$12.721

$11.704

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IDEA Electronic Components Group

UK . 1,757 parts In-Stock

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$12.981

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$12.332

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$11.683

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1,757

$12.981

$12.332

$11.683

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ChromeModa Solutions

Germany . 327 parts In-Stock

1+ parts

$12.981

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$10.644

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327

$12.981

$10.644

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Perfect Parts

USA . 14,056 parts In-Stock

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Microchip USA

USA . 2,926 parts In-Stock

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Robosynatics

Brazil . 30 parts In-Stock

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Lucentia Tech

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Overview

Enhance your electronic designs with the top-quality SN74LVC1G17DCKRE4 logic gate from Texas Instruments. Known for their reliable and innovative products, Texas Instruments delivers exceptional performance and durability. This versatile logic gate is perfect for a wide range of applications, providing fast propagation delays and low power consumption. Upgrade your projects with this compact and efficient component, offering high value and numerous benefits to meet all your design needs. Trust Texas Instruments for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material, suitable for a variety of applications.

Propagation Delay At Nominal Supply: 5.5 ns

Fast signal propagation, ensuring efficient operation of the logic gates.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards.

Nominal Supply Voltage / Vsup (V): 3.3

Suitable voltage level for many common electronic devices.

Load Capacitance (CL): 50 pF

Designed to work efficiently with a specific load capacitance.

Power Supplies (V): 3.3

Matches the nominal supply voltage for consistent performance.

No. of Terminals: 5

Compact design with a minimal number of terminals for simplified connections.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Space-saving package style suitable for compact electronic devices.

Maximum I (ol): 24 Amp

Capable of handling high output currents for robust operation.

Propagation Delay (tpd): 11 ns

Low propagation delay ensures rapid response to inputs.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for various environments.

Minimum Operating Temperature: -40 °C

Works reliably even in low-temperature conditions.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Durable terminal finish for long-lasting performance.

Terminal Position: DUAL

Dual terminal position for versatile installation options.

Maximum Seated Height: 1.1 mm

Low profile design for space-constrained applications.

Width: 1.25 mm

Compact width for efficient use of board space.

Minimum Supply Voltage (Vsup): 1.65 V

Can operate at low supply voltages, saving power.

Peak Reflow Temperature °C: 260

Can withstand high-temperature reflow processes during assembly.

Length: 2 mm

Small length for compact device designs.

Temperature Grade: AUTOMOTIVE

Suitable for automotive applications with temperature requirements.

Schmitt Trigger: YES

Incorporates Schmitt trigger for noise immunity and signal conditioning.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Terminal Form: GULL WING

Gull wing terminal design for secure soldering connection.

Packing Method: TR

Tray packaging method for convenient handling and storage.

Terminal Pitch: 0.65 mm

Fine terminal pitch for high-density PCB layouts.

Maximum Supply Voltage (Vsup): 5.5 V

Can handle higher supply voltages for versatility in applications.

Maximum Power Supply Current (ICC): 0.01 mA

Low power supply current for energy-efficient operation.

Technical Specifications

Logic Gates SN74LVC1G17DCKRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

5.5 ns

Propagation Delay (tpd):

11 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

SN74LVC1G17DCKRE4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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