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SN74LVC1G07DCKJ

Texas Instruments

SN74LVC1G07DCKJ by Texas Instruments

SN74LVC1G07DCKJ by Texas Instruments is a CMOS logic gate with 5 terminals, operating at 1.8V to 3.3V. It features an open-drain output and a propagation delay of 8.3ns, suitable for industrial applications requiring fast response times in a compact package measuring 2mm x 1.25mm x 1.1mm.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 507,860 parts In-Stock

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Vyrian

USA . 7,918 parts In-Stock

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Digiode

USA . 3,824 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Parana Technologies

USA . 855 parts In-Stock

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$11.291

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$11.722

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855

$11.291

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AZTECH Wire

Italy . 633 parts In-Stock

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$11.586

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DigiPath Technology Company

USA . 2,070 parts In-Stock

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$12.432

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$11.438

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$12.432

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ChromeModa Solutions

Germany . 2,948 parts In-Stock

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$12.686

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$10.403

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IDEA Electronic Components Group

UK . 364 parts In-Stock

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$12.686

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$12.052

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$11.417

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Semicontronic

India . 682 parts In-Stock

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$13.000

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$12.675

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$12.610

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Corohmni

South Africa . 194 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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Ampacity Inc.

Singapore . 781 parts In-Stock

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One Stop Electronics

USA . 1,214 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Continental Prestige Electronics

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Corphita

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Argo Parts USA

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Bastille Electronics

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Overview

Enhance your electronic projects with the high-quality SN74LVC1G07DCKJ logic gate from Texas Instruments. Designed for industrial applications, this compact and efficient component offers a nominal supply voltage of 1.8V and a maximum propagation delay of just 8.3ns. With an open-drain output characteristic and a wide operating temperature range, this versatile logic gate is perfect for a variety of circuit designs. Trust the reliability and innovation of Texas Instruments to bring value and performance to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material makes the product easy to handle and long-lasting.

Surface Mount: YES

Easy to install on circuit boards, reducing assembly time and effort.

Package Shape: RECTANGULAR

Standard shape for easy integration into existing designs and layouts.

Nominal Supply Voltage / Vsup (V): 1.8

Low power consumption minimizes energy costs and extends battery life in portable devices.

Power Supplies (V): 3.3

Compatible with common power sources, ensuring easy integration into various applications.

No. of Terminals: 5

Simple and straightforward design for uncomplicated connectivity and installation.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Compact size saves space on circuit boards and allows for high-density layouts.

Maximum I (ol): 24 Amp

High output current capability for driving loads and ensuring robust performance.

Propagation Delay (tpd): 8.3 ns

Fast response time enhances signal processing speed and overall system efficiency.

Maximum Operating Temperature: 85 °C

Wide operating temperature range for reliable performance in various environments.

Output Characteristics: OPEN-DRAIN

Versatile output configuration for compatibility with different types of systems and components.

Minimum Operating Temperature: -40 °C

Suitable for use in extreme temperature conditions without compromising performance.

Terminal Finish: NICKEL PALLADIUM GOLD

Corrosion-resistant finish for long-term reliability and stable electrical connections.

Terminal Position: DUAL

Multiple terminal positions for flexibility in PCB layout and assembly.

Maximum Seated Height: 1.1 mm

Low profile design for space-constrained applications and compact devices.

Width: 1.25 mm

Slim width for efficient use of board space and compact system designs.

Minimum Supply Voltage (Vsup): 1.65 V

Low voltage operation for energy-efficient performance and reduced power consumption.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper solder reflow process and component reliability during assembly.

Peak Reflow Temperature °C: 260

High reflow temperature tolerance for robust solder joints and reliable connections.

Length: 2 mm

Compact length for space-saving designs and efficient PCB layouts.

Temperature Grade: INDUSTRIAL

Suitable for use in industrial environments with varying temperature conditions and harsh operating conditions.

Technology: CMOS

Advanced CMOS technology for low power consumption and high-speed operation in digital circuits.

Terminal Form: GULL WING

Secure terminal form for reliable solder joints and mechanical stability on the PCB.

Terminal Pitch: 0.65 mm

Fine pitch spacing for high-density circuit design and compact layout.

Maximum Supply Voltage (Vsup): 5.5 V

Wide supply voltage range for compatibility with various power sources and applications.

Technical Specifications

Logic Gates SN74LVC1G07DCKJ attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay (tpd):

8.3 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

SN74LVC1G07DCKJ Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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