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SN74AHC14PWRG4

Texas Instruments

SN74AHC14PWRG4 by Texas Instruments

SN74AHC14PWRG4 by Texas Instruments is a CMOS logic gate with 6 functions and a propagation delay of 12 ns at 3.3V. It operates in a temperature range from -40 to 125 °C and is suitable for automotive applications due to its Schmitt Trigger technology and small outline package style.

Median Price

$0.456

Lifecycle Status

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9

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Texas Instruments

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Mouser Electronics

USA . 3,720 parts In-Stock

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Nova Conductors

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Digiode

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Bristol Electronics

USA . 20 parts In-Stock

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Vyrian

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Chip Stock

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Continental Prestige Electronics

USA . 1,708 parts In-Stock

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$0.204

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Argo Parts USA

USA . 125 parts In-Stock

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Ampacity Inc.

Singapore . 66,376 parts In-Stock

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Semicontronic

India . 66,123 parts In-Stock

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Corphita

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Parana Technologies

USA . 1,957 parts In-Stock

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DigiPath Technology Company

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ChromeModa Solutions

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IDEA Electronic Components Group

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Advanced Electronics

New Zealand . 35 parts In-Stock

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Corohmni

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Lixinc

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iodParts Technologies Inc.

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Perfect Parts

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Microchip USA

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Netroflash

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Lucentia Tech

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Modulus Dynamics

Lithuania . 200 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of Texas Instruments with the SN74AHC14PWRG4 logic gates. Designed for efficiency and precision, this product offers a wide range of applications in various industries. With a compact design and top-notch performance, customers can benefit from its high-speed operation and low power consumption. Trust Texas Instruments to provide cutting-edge technology that exceeds expectations every time. Upgrade your projects with the SN74AHC14PWRG4 and experience innovation at its finest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY package body material provides durability and protection for the internal components of the logic gates, making them suitable for various environments.

Propagation Delay At Nominal Supply: 12 ns

Low propagation delay of 12 ns ensures quick response time for signal processing within the logic gates, making them efficient for time-sensitive applications.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting of the logic gates onto circuit boards, streamlining the manufacturing and assembly process.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V offers compatibility with a wide range of electronic systems and ensures energy efficiency.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Small outline, thin profile, and shrink pitch package style saves space on the circuit board and enhances the overall compactness and efficiency of the design.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, these logic gates can withstand high-temperature conditions, making them suitable for demanding industrial and automotive applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of operating voltages, making it an efficient choice for logic gate applications.

Technical Specifications

Logic Gates SN74AHC14PWRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

12 ns

Propagation Delay (tpd):

18.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4.4 mm

Trade Compliance

SN74AHC14PWRG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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