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SN74LVC1G11DBVR

Texas Instruments

SN74LVC1G11DBVR by Texas Instruments

SN74LVC1G11DBVR by Texas Instruments is a logic gate with 3 inputs, 4.9 ns propagation delay at 3.3V, and 50 pF load capacitance. It is used in automotive applications due to its low profile design, CMOS technology, and wide operating temperature range from -40°C to 125°C.

Median Price

$0.174

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Texas Instruments

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Chip1Stop

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Newark

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$0.390

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DigiKey

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Arrow

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Verical

USA . 3,169 parts In-Stock

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Element14

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Farnell

UK . 3 parts In-Stock

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Maritex

Poland . 3 parts In-Stock

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Digiode

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TME

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Component Electronics Inc.

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TEDSS.com

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Semtec, LLC

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Speed Components Ltd

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Sensible Micro Corp

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Ampacity Inc.

Singapore . 147,077 parts In-Stock

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Semicontronic

India . 147,021 parts In-Stock

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Corphita

USA . 4,990 parts In-Stock

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Argo Parts USA

USA . 4,949 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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Modulus Dynamics

Lithuania . 79 parts In-Stock

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Continental Prestige Electronics

USA . 15,141 parts In-Stock

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$0.100

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$0.083

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$0.064

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Microchip USA

USA . 7,715 parts In-Stock

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$0.729

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AZTECH Wire

Italy . 467 parts In-Stock

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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Parana Technologies

USA . 1,916 parts In-Stock

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$29.600

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$61.082

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Corohmni

South Africa . 301 parts In-Stock

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$32.259

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DigiPath Technology Company

USA . 1,036 parts In-Stock

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$29.985

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ChromeModa Solutions

Germany . 4,023 parts In-Stock

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IDEA Electronic Components Group

UK . 1,715 parts In-Stock

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$33.258

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$31.595

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$29.932

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Perfect Parts

USA . 152,869 parts In-Stock

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GreenTree Electronics

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Kepictronics

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Allen Electronics Distributors

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S.R.D Solutions

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A-Z Elektronik GmbH

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Lixinc

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Speed Components Ltd (Excess)

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Brazil . 161 parts In-Stock

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USA . 161 parts In-Stock

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$30.369

Formix International (Excess)

India . 2 parts In-Stock

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Overview

Enhance your electronic projects with the SN74LVC1G11DBVR by Texas Instruments, a high-quality logic gate that offers fast propagation delay and low power consumption. Manufactured by industry leader Texas Instruments, this versatile component is perfect for a wide range of applications in automotive and consumer electronics. Its compact design and 3-state output characteristics make it a valuable addition to any circuit design, providing reliability and efficiency. Upgrade your projects today with the SN74LVC1G11DBVR and experience superior performance and seamless integration.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the product lightweight and cost-effective.

Propagation Delay at Nominal Supply: 4.9 ns

Fast propagation delay ensures quick operation, ideal for high-speed applications.

Surface Mount: YES

Surface mount capability makes installation and maintenance easy and efficient.

No. of Inputs: 3

Having 3 inputs allows for more complex logic operations to be performed.

Nominal Supply Voltage/Vsup: 3.3V

Operating at a low voltage helps in reducing power consumption.

Load Capacitance (CL): 50 pF

Designed to handle a standard load capacitance for reliable performance.

Power Supplies (V): 3.3

Compatible with common power supply voltages for easy integration.

No. of Terminals: 6

Sufficient terminals for connecting to other components in a circuit.

Package Style (Meter): SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Compact package design saves space and allows for high-density integration.

Maximum I (ol): 32 A

High output current capability allows for driving larger loads.

Propagation Delay (tpd): 17.2 ns

Low propagation delay ensures minimal signal distortion and accurate timing.

Maximum Operating Temperature: 125 °C

Can operate reliably in high-temperature environments.

Output Characteristics: 3-STATE

Enables the output to be in a high impedance state, providing flexibility in circuit design.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold conditions without performance issues.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Provides excellent corrosion resistance for longevity.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit board layout.

Maximum Seated Height: 1.45 mm

Low profile design is ideal for applications with height restrictions.

Width: 1.6 mm

Compact width makes it suitable for space-constrained applications.

Minimum Supply Voltage (Vsup): 1.65V

Can operate at a low voltage, conserving power.

Peak Reflow Temperature °C: 260

Can withstand high-temperature reflow soldering processes.

Length: 2.9 mm

Compact length makes it suitable for tight spaces.

Temperature Grade: AUTOMOTIVE

Automotive-grade quality ensures reliability in harsh environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Terminal Form: GULL WING

Gull wing terminals provide secure solder joints for durability.

Packing Method: TR

Tape and reel packaging simplifies handling and assembly processes.

Terminal Pitch: 0.95 mm

Fine terminal pitch allows for high-density mounting on PCBs.

Maximum Supply Voltage (Vsup): 5.5V

Can operate at a wide range of supply voltages for versatility.

Maximum Power Supply Current (ICC): 0.01 mA

Low power supply current consumption for energy efficiency.

Technical Specifications

Logic Gates SN74LVC1G11DBVR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

3

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

4.9 ns

Propagation Delay (tpd):

17.2 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.6 mm

Trade Compliance

SN74LVC1G11DBVR Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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