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SN74LVC1G57DBVR

Texas Instruments

SN74LVC1G57DBVR by Texas Instruments

SN74LVC1G57DBVR by Texas Instruments is a CMOS logic gate with 3 inputs, operating at 1.8V nominal voltage and 3.3V power supplies. It features a propagation delay of 16.4ns, Schmitt Trigger technology, and can handle up to 50pF load capacitance. Ideal for automotive applications due to its temperature grade and small outline package style.

Median Price

$0.216

Lifecycle Status

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Chip1Stop

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Arrow

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DigiKey

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Verical

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Rochester

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Digiode

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DF Sales Co.

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TME

Poland . 1,933 parts In-Stock

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Touchstone Systems

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Diverse Electronics

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Corphita

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Modulus Dynamics

Lithuania . 550 parts In-Stock

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DigiPath Technology Company

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IDEA Electronic Components Group

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Advanced Electronics

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Overview

Unlock the power of efficient logic gate functionality with the SN74LVC1G57DBVR by Texas Instruments. Crafted with precision and excellence, Texas Instruments delivers unparalleled quality in the realm of logic gates. Ideal for a wide range of applications, this small yet powerful device offers customers a reliable solution that guarantees optimal performance. With a nominal supply voltage of 1.8V and a maximum operating temperature of 125°C, the SN74LVC1G57DBVR provides unmatched value, benefits, and advantages to meet your circuit design needs. Choose Texas Instruments for cutting-edge technology and superior products.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and flexibility, making the product suitable for a variety of applications.

Surface Mount: YES

The surface mount capability allows for easy installation and integration into circuit boards.

No. of Inputs: 3

With three inputs, this logic gate can handle multiple signals efficiently.

Nominal Supply Voltage: 1.8V

The low supply voltage requirement helps in minimizing power consumption and reducing heat generation.

Load Capacitance: 50 pF

The load capacitance value ensures stable and reliable operation in different circuit configurations.

Power Supplies: 3.3V

The 3.3V power supply provides compatibility with common voltage levels in electronic systems.

No. of Terminals: 6

The six terminals allow for easy connectivity and cable management.

Package Style: SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

This package style offers space-saving benefits and improved thermal management in compact designs.

Maximum I (ol): 32 Amp

With a high maximum output current, this logic gate can drive heavy loads effectively.

Propagation Delay: 16.4 ns

The short propagation delay ensures fast signal processing and low latency in the circuit.

Maximum Operating Temperature: 125 °C

The wide operating temperature range makes the product suitable for harsh environmental conditions.

Minimum Operating Temperature: -40 °C

The ability to operate in extreme cold temperatures enhances the product's versatility.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

This terminal finish provides excellent conductivity and corrosion resistance for long-term reliability.

Terminal Position: DUAL

The dual terminal position offers flexibility in PCB layout and installation orientation.

Maximum Seated Height: 1.45 mm

The low seated height allows for compact designs and efficient use of space.

Width: 1.6 mm

The narrow width facilitates tight spacing between components on the circuit board.

Minimum Supply Voltage: 1.65 V

The low minimum supply voltage ensures compatibility with a wide range of power sources.

Peak Reflow Temperature: 260 C

The high peak reflow temperature tolerance enables reliable soldering during assembly processes.

Length: 2.9 mm

The moderate length of the product allows for versatile placement within the circuit.

Temperature Grade: AUTOMOTIVE

The automotive-grade quality ensures reliability in demanding automotive applications.

Schmitt Trigger: YES

The Schmitt trigger feature helps in achieving noise immunity and signal conditioning for precise input signal detection.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity for efficient operation.

Terminal Form: GULL WING

The gull-wing terminal form provides mechanical stability and ease of solder joint inspection.

Packing Method: TR

The Tape and Reel packing method ensures convenient handling and automated assembly processes.

Terminal Pitch: 0.95 mm

The narrow terminal pitch allows for high-density mounting and space-efficient PCB layouts.

Maximum Supply Voltage: 5.5 V

The high maximum supply voltage tolerance ensures compatibility with various power sources.

Maximum Power Supply Current: 0.01 mA

The low maximum power supply current requirement contributes to energy efficiency and reduced operating costs.

Technical Specifications

Logic Gates SN74LVC1G57DBVR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

3

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay (tpd):

16.4 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.6 mm

Trade Compliance

SN74LVC1G57DBVR Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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