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NSBC143EF3T5G

Onsemi

NSBC143EF3T5G by Onsemi

NSBC143EF3T5G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and DC current gain of 15. This small outline package with matte tin finish operates up to 150°C, making it ideal for compact electronic devices.

Median Price

$0.098

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 317,830 parts In-Stock

1+ parts

-

100+ parts

$0.102

1k+ parts

$0.085

10k+ parts

$0.075

317,830

-

$0.102

$0.085

$0.075

DigiKey

USA . 317,830 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.130

317,830

-

-

-

$0.130

Verical

USA . 317,830 parts In-Stock

1+ parts

-

100+ parts

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$0.094

317,830

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-

$0.094

Flip Electronics (Authorized)

USA . 304,000 parts In-Stock

1+ parts

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304,000

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Mouser Electronics

USA . 903 parts In-Stock

1+ parts

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$0.080

903

-

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-

$0.080

Distributors (In-Stock)

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Digiode

USA . 566 parts In-Stock

1+ parts

$0.079

100+ parts

-

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566

$0.079

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Vyrian

USA . 1,866 parts In-Stock

1+ parts

$0.080

100+ parts

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1,866

$0.080

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Flip Electronics

USA . 304,000 parts In-Stock

1+ parts

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304,000

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Chip Stock

USA . 74,000 parts In-Stock

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74,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,967 parts In-Stock

1+ parts

$0.075

100+ parts

-

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1,967

$0.075

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Corohmni

South Africa . 367 parts In-Stock

1+ parts

$0.080

100+ parts

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367

$0.080

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Continental Prestige Electronics

USA . 317,830 parts In-Stock

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$0.100

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317,830

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$0.100

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Kulean Microsystems

USA . 6,496 parts In-Stock

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6,496

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SupplyDigital Components

Austria . 6,361 parts In-Stock

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6,361

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Problanco Electronics

Mexico . 4,502 parts In-Stock

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TANS Electronics

Latvia . 3,986 parts In-Stock

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3,986

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UHIMA Technologies

Türkiye . 805 parts In-Stock

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805

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Overview

Enhance your electronic projects with the NSBC143EF3T5G by Onsemi! As a leading manufacturer in the industry, Onsemi guarantees quality and reliability. This small signal bipolar junction transistor (BJT) is perfect for switching applications, providing seamless performance and efficiency. With its NPN polarity, built-in resistor, and compact design, this transistor offers convenience and versatility. Whether you're a hobbyist or a professional, this product delivers exceptional value and benefits, making it an essential component for your projects. Experience superior performance with the NSBC143EF3T5G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Ideal for use in applications that require NPN transistors, ensuring compatibility with existing circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by eliminating the need for an external resistor, saving space and reducing costs.

Transistor Application: SWITCHING

Designed for switching applications, making it suitable for use in a wide range of electronic devices.

Surface Mount: YES

Allows for easy and convenient installation on PCBs, saving time during assembly.

Package Shape: RECTANGULAR

Facilitates efficient placement on PCBs and allows for space-saving design layouts.

No. of Terminals: 3

Provides the necessary connections for proper operation within a circuit.

Maximum Power Dissipation (Abs): 0.297 W

Can handle a moderate power dissipation, suitable for many common applications.

Package Style (Meter): SMALL OUTLINE

Compact package style helps conserve space on the PCB, making it suitable for small electronics.

Minimum DC Current Gain (hFE): 15

Ensures reliable amplification of current within the circuit.

Maximum Operating Temperature: 150 °C

Suitable for use in a variety of environments with elevated operating temperatures.

Maximum Collector-Emitter Voltage: 50 V

Withstands high voltage levels, making it versatile for different applications.

Transistor Element Material: SILICON

Offers high performance and reliability compared to other materials.

Maximum Collector Current (IC): 0.1 A

Handles moderate current levels, suitable for various circuit applications.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a reliable and durable finish for the terminals, ensuring long-term performance.

Terminal Position: DUAL

Offers flexibility in circuit design and installation, accommodating different connection orientations.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC143EF3T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC143EF3T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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