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NOIP3SN5000A-QDI

Onsemi

NOIP3SN5000A-QDI by Onsemi

NOIP3SN5000A-QDI by Onsemi features 4.8x4.8 um pixel size, 360 MHz master clock, and 2592x2048 resolution. Ideal for image sensing applications with a frame rate of 45 fps and spectral response of 400-1000 nm.

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AZTECH Wire

Italy . 1,139 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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Overview

Discover the NOIP3SN5000A-QDI by Onsemi, a cutting-edge image sensor designed to elevate your imaging experience. Crafted by the reputable manufacturer Onsemi, this sensor boasts unrivaled quality and reliability. Ideal for a wide range of applications, this sensor delivers crystal-clear images with exceptional detail. With a high dynamic range and fast frame rate, this sensor ensures stunning visuals every time. Say goodbye to average imaging solutions and step into the world of unparalleled clarity and precision with the NOIP3SN5000A-QDI. Experience the difference today.

Feature Benefit Bullets

Pixel Size (um): 4.8X4.8

This small pixel size allows for high resolution images, making this product ideal for applications where detailed images are necessary.

Maximum Supply Voltage: 1.9 V

The low maximum supply voltage helps in reducing power consumption and increasing efficiency of the sensor.

Master Clock: 360 MHz

The high master clock frequency enables fast data processing, ensuring real-time image capture and processing capabilities.

Body Width: 19 inch

The compact body width allows for easy integration into different devices and systems without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS sensors offer high-quality image capture, low power consumption, and fast data readout, making them a popular choice for various applications.

Package Shape or Style: SQUARE

The square package shape allows for easy and secure mounting, ensuring stability during operation.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage further enhances power efficiency and extends the product's battery life.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can be used in a wide range of environments without the risk of damage due to overheating.

Horizontal Pixel: 2592

The high horizontal pixel count contributes to the sensor's high-resolution image capture capabilities.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that the sensor can still function optimally in extremely cold environments.

Dynamic Range: 60 dB

The wide dynamic range allows the sensor to capture both bright and dark areas in an image with high levels of detail and accuracy.

Vertical Pixel: 2048

The vertical pixel count complements the horizontal pixel count, providing a high-resolution image output.

Body Length/Diameter: 19 mm

The compact body length or diameter ensures easy integration and compatibility with various systems and devices.

Spectral Response (nm): 400-1000

The wide spectral response range allows the sensor to capture a broad range of colors and details in different lighting conditions.

Termination Type: SOLDER

The solder termination type ensures a secure and reliable connection, reducing the risk of signal interference or loss.

Output Interface Type: 4-WIRE INTERFACE

The 4-wire interface type facilitates easy and fast data transfer between the sensor and other connected devices.

Frame Rate: 45 fps

The high frame rate enables smooth and fluid image capture, making it suitable for applications requiring rapid image processing.

Array Type: FRAME

The frame array type allows for easy capture and processing of sequential images, making it suitable for video recording and surveillance applications.

Sensitivity (V/lx.s): 7.5 V/lx.s

The high sensitivity level ensures that the sensor can capture clear and detailed images even in low-light conditions.

Mounting Feature: SURFACE MOUNT

The surface mounting feature makes installation and integration of the sensor easy and efficient, saving time and effort during setup.

Technical Specifications

Image Sensors NOIP3SN5000A-QDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

19 inch

Body Height:

2.41 mm

Body Length/Diameter:

19 mm

Dynamic Range:

60 dB

Frame Rate:

45 fps

Horizontal Pixel:

2592

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.8X4.8

Sensitivity (V/lx.s):

7.5 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2048

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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