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NOIP1FN025KA-GTI

Onsemi

NOIP1FN025KA-GTI by Onsemi

NOIP1FN025KA-GTI by Onsemi is a 4.5X4.5 um CMOS image sensor with 5120x5120 pixels, offering a dynamic range of 59 dB and sensitivity of 5.8 V/lx.s. It operates at a max supply voltage of 1.9V, has a master clock of 360 MHz, and is suitable for applications requiring high-resolution imaging at up to 80 fps frame rate.

Median Price

$2,597.080

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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DigiKey

USA . 25 parts In-Stock

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$2,597.080

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Verical

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Digiode

USA . 52 parts In-Stock

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$2,568.772

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Vyrian

USA . 8,067 parts In-Stock

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Corphita

USA . 1,262 parts In-Stock

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$2,433.573

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Corohmni

South Africa . 402 parts In-Stock

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$2,703.970

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Problanco Electronics

Mexico . 3,070 parts In-Stock

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Kulean Microsystems

USA . 3,043 parts In-Stock

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SupplyDigital Components

Austria . 2,882 parts In-Stock

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TANS Electronics

Latvia . 1,842 parts In-Stock

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UHIMA Technologies

Türkiye . 442 parts In-Stock

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GreenTree Electronics

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Perfect Parts

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Overview

Capture stunning images with the NOIP1FN025KA-GTI by Onsemi, a top-of-the-line image sensor designed to deliver unparalleled quality and performance. Trust in Onsemi's reputation for excellence in manufacturing as you explore the endless possibilities of this innovative technology. Whether you're a professional photographer looking to elevate your work or an engineer seeking cutting-edge solutions, this sensor is sure to exceed your expectations. Experience the value, benefits, and advantages that only Onsemi can provide with the NOIP1FN025KA-GTI.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

Small pixel size allows for higher resolution and better detail in captured images.

Maximum Supply Voltage: 1.9 V

Efficient power usage with a low maximum supply voltage.

Master Clock: 360 MHz

High master clock frequency enables fast data processing and image capture.

Body Width: 36.1 inch

Compact and easily integratable design.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors provide high image quality and efficiency.

Body Height: 3.5 mm

Slim profile for versatile mounting options.

Package Shape or Style: RECTANGULAR

Standard shape for easy integration into various devices.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage for energy efficiency.

Maximum Operating Temperature: 85 °C

Wide operating temperature range for versatility in different environments.

Horizontal Pixel: 5120

High horizontal pixel count for detailed images.

Minimum Operating Temperature: -40 °C

Withstands low temperatures for operation in cold environments.

Dynamic Range: 59 dB

Wide dynamic range for capturing both dark and bright areas in an image.

Vertical Pixel: 5120

High vertical pixel count for detailed images.

Body Length/Diameter: 43.1 mm

Compact size for easy integration and installation.

Optical Format (inch): 1.28

Standard optical format for compatibility with various lenses.

Termination Type: SOLDER

Secure termination for reliable connections.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface for efficient data transfer.

Frame Rate: 80 fps

High frame rate for smooth and detailed video recording.

Array Type: FRAME

Frame array for efficient image capture and processing.

Sensitivity (V/lx.s): 5.8 V/lx.s

High sensitivity for accurate and clear image capture in various lighting conditions.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting for secure and stable installation.

Technical Specifications

Image Sensors NOIP1FN025KA-GTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

36.1 inch

Body Height:

3.5 mm

Body Length/Diameter:

43.1 mm

Dynamic Range:

59 dB

Frame Rate:

80 fps

Horizontal Pixel:

5120

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1.28

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensitivity (V/lx.s):

5.8 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

5120

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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