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MC100EP809MNR4G

Onsemi

MC100EP809MNR4G by Onsemi

MC100EP809MNR4G clock driver by Onsemi has 1.11 ns propagation delay at 3.3V, with 32 terminals in a square chip carrier package. It features differential mux input conditioning for high-speed applications up to 500 MHz, suitable for commercial extended temperature grade environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,331 parts In-Stock

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Digiode

USA . 319 parts In-Stock

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319

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AZTECH Wire

Italy . 1,007 parts In-Stock

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$20.640

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$31.519

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$28.682

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$25.846

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200

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$25.846

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TANS Electronics

Latvia . 6,751 parts In-Stock

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Problanco Electronics

Mexico . 6,660 parts In-Stock

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SupplyDigital Components

Austria . 1,944 parts In-Stock

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Kulean Microsystems

USA . 1,034 parts In-Stock

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Corphita

USA . 957 parts In-Stock

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Corohmni

South Africa . 470 parts In-Stock

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UHIMA Technologies

Türkiye . 378 parts In-Stock

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Microchip USA

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Overview

The MC100EP809MNR4G by Onsemi is a top-of-the-line Clock Driver & Buffer that offers unparalleled quality and reliability. Onsemi's reputation for excellence in electronic components ensures that this product meets the highest standards in the industry. Ideal for applications requiring precise timing and synchronization, this clock driver provides fast propagation delay and low power consumption. With its advanced technology and wide operating temperature range, the MC100EP809MNR4G is the perfect choice for customers who demand superior performance and value in their electronic devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable and rugged applications.

Propagation Delay at Nominal Supply: 1.11 ns

The low propagation delay ensures fast and efficient signal processing, making it suitable for high-speed clocking applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during production.

Nominal Supply Voltage / Vsup (V): 3.3

The stable supply voltage of 3.3V ensures reliable operation of the product within specified parameters.

Power Supplies (V): 1.8,3.3

The availability of multiple power supply options allows for flexibility in designing and compatibility with different systems.

No. of Terminals: 32

Having 32 terminals provides ample connection points for interfacing with other components, increasing the versatility of the product.

Package Style (Meter): CHIP CARRIER, VERY THIN PROFILE

The chip carrier with a very thin profile saves space on the PCB, making it suitable for compact designs and applications with limited space.

Technology: ECL

The ECL technology offers high-speed performance and low power consumption, making it an efficient choice for clock drivers and buffers.

Technical Specifications

Clock Drivers & Buffers MC100EP809MNR4G attributes and parameters. Explore more Clock Drivers & Buffers devices from Onsemi

Specs

Family:

100E

Input Conditioning:

DIFFERENTIAL MUX

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e3

Length:

5 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

32

No. of True Outputs:

9

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8,3.3

Propagation Delay At Nominal Supply:

1.11 ns

Propagation Delay (tpd):

1 ns

Qualification:

Not Qualified

Maximum Same Edge Skew (tskwd):

.05 ns

Maximum Seated Height:

1 mm

Sub-Category:

Clock Drivers

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Minimum fmax:

500 MHz

Trade Compliance

MC100EP809MNR4G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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