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MC100E111FNG

Onsemi

MC100E111FNG by Onsemi

MC100E111FNG clock driver by Onsemi features 0.66ns propagation delay, 5V nominal voltage, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring differential input conditioning and 3-STATE output characteristics in a square chip carrier package.

Median Price

$11.985

Lifecycle Status

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11

In-Stock Inventory

1k+

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DigiKey

USA . 13 parts In-Stock

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$15.230

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Rochester

USA . 548 parts In-Stock

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$8.740

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$7.820

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$7.360

548

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$7.360

Flip Electronics (Authorized)

USA . 74 parts In-Stock

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Digiode

USA . 293 parts In-Stock

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$9.244

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Vyrian

USA . 8,636 parts In-Stock

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Nova Conductors

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Connector Distribution Corp

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Right Parts Inc.

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Sunrise Surplus Inc.

USA . 5 parts In-Stock

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Elcom Components

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Ampacity Inc.

Singapore . 904 parts In-Stock

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$8.270

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$8.270

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Semicontronic

India . 708 parts In-Stock

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$8.270

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$8.063

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$8.022

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$8.270

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Corphita

USA . 1,396 parts In-Stock

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$8.757

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Aztec Data Supply Inc.

USA . 4,361 parts In-Stock

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$9.201

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Corohmni

South Africa . 466 parts In-Stock

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Microchip USA

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TANS Electronics

Latvia . 7,462 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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Kulean Microsystems

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Continental Prestige Electronics

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Lixinc

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UHIMA Technologies

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Argo Parts USA

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Bastille Electronics

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Perfect Parts

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Overview

Enhance your electronic designs with the MC100E111FNG clock driver by Onsemi. This high-quality chip carrier offers precise clock distribution in a wide range of applications, from telecommunications to industrial automation. With differential input conditioning and 3-STATE output characteristics, this clock driver ensures reliable performance and low propagation delay. Trust in Onsemi's expertise in clock drivers and buffers for superior products that deliver value, efficiency, and innovation to your projects. Upgrade your designs with the MC100E111FNG and experience seamless clock management like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and reliable casing for the product

Propagation Delay At Nominal Supply: 0.66 ns

Ensures fast response time for clock signals

Surface Mount: YES

Easy to install and saves space on the PCB

Input Conditioning: DIFFERENTIAL

Helps in reducing noise and interference in input signals

Nominal Supply Voltage / Vsup (V): 5

Compatible with common supply voltages in electronic systems

Power Supplies (V): -4.5

Can handle negative power supplies

No. of Terminals: 28

Provides flexibility in connecting to other components

Package Style (Meter): CHIP CARRIER

Offers a compact and efficient packaging solution

Maximum Operating Temperature: 85 °C

Can operate reliably in a wide range of temperature conditions

Output Characteristics: 3-STATE

Allows for high impedance output state when not actively driving signals

Technical Specifications

Clock Drivers & Buffers MC100E111FNG attributes and parameters. Explore more Clock Drivers & Buffers devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0 V WITH VEE = -4.2 V TO -5.7 V

Family:

100E

Input Conditioning:

DIFFERENTIAL

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e3

Length:

11.505 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

28

No. of True Outputs:

9

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

-4.5

Propagation Delay At Nominal Supply:

.66 ns

Propagation Delay (tpd):

.78 ns

Qualification:

Not Qualified

Maximum Same Edge Skew (tskwd):

.075 ns

Maximum Seated Height:

4.57 mm

Sub-Category:

Clock Drivers

Maximum Supply Voltage (Vsup):

5.7 V

Minimum Supply Voltage (Vsup):

4.2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

11.505 mm

Trade Compliance

MC100E111FNG Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-632-3895, 5962016323895

NIIN

016323895

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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