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KAI-16050-QXA-JD-B1

Onsemi

KAI-16050-QXA-JD-B1 by Onsemi

KAI-16050-QXA-JD-B1 by Onsemi is an image sensor with 5.5X5.5 um pixel size, 15.5 V max supply voltage, and 4964 horizontal pixels. It is ideal for applications requiring high-resolution imaging in a compact form factor, such as industrial machine vision systems or medical imaging devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,213 parts In-Stock

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Digiode

USA . 1,818 parts In-Stock

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AZTECH Wire

Italy . 135 parts In-Stock

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$11.130

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Kulean Microsystems

USA . 8,012 parts In-Stock

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TANS Electronics

Latvia . 4,941 parts In-Stock

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SupplyDigital Components

Austria . 2,294 parts In-Stock

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UHIMA Technologies

Türkiye . 588 parts In-Stock

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Problanco Electronics

Mexico . 553 parts In-Stock

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Corohmni

South Africa . 470 parts In-Stock

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Corphita

USA . 331 parts In-Stock

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Overview

Capture the essence of every moment with the KAI-16050-QXA-JD-B1 by Onsemi. As a leading manufacturer in the industry, Onsemi's image sensors are known for their superior quality and reliability. Ideal for a wide range of applications, this CCD image sensor offers unparalleled performance and precision. With its impressive dynamic range and high pixel resolution, customers can trust that their images will be captured with stunning clarity and detail. Elevate your imaging experience with the KAI-16050-QXA-JD-B1 and see the difference it can make in your projects.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for high resolution images to be captured with fine details, making this image sensor suitable for applications requiring excellent image quality.

Maximum Supply Voltage: 15.5 V

The higher maximum supply voltage allows for increased flexibility in power supply options and compatibility with a wider range of systems.

Body Width: 45.34 inch

The compact body width of this image sensor makes it easy to integrate into various devices or systems without taking up too much space.

Power Supplies (V): 15

The standardized power supply voltage of 15V simplifies the integration process and ensures compatibility with common power sources.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Being a CCD image sensor, it offers high-quality imaging with low noise, making it suitable for applications where image clarity is crucial.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easy placement and alignment within a device or system, ensuring efficient utilization of space.

Minimum Supply Voltage: 14.5 V

The lower minimum supply voltage ensures that the image sensor can operate reliably even in situations where power sources may fluctuate slightly.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70 °C makes this image sensor suitable for use in a wide range of environmental conditions.

Horizontal Pixel: 4964

The high number of horizontal pixels enables the image sensor to capture detailed and high-resolution images with sharpness and clarity.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature of -50 °C ensures that the image sensor can function reliably in cold climates or environments.

Dynamic Range: 64 dB

The wide dynamic range of 64 dB allows the image sensor to capture both bright and dark areas in the same scene with details preserved, making it ideal for high-contrast imaging.

Vertical Pixel: 3332

The vertical pixel count of 3332 contributes to the overall image resolution and sharpness, enabling the image sensor to produce high-quality images.

Body Length/Diameter: 47.24 mm

The compact body length/diameter makes the image sensor easy to handle and install, simplifying the integration process in various applications.

Termination Type: SOLDER

The solder termination type ensures a secure and stable connection between the image sensor and other components, enhancing reliability and durability.

Array Type: INTERLINE

The interline array type offers fast readout speeds and efficient data transfer, making the image sensor suitable for applications requiring quick image capture.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and ensures a secure fit within a device or system, enhancing stability and performance.

Technical Specifications

Image Sensors KAI-16050-QXA-JD-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Length/Diameter:

47.24 mm

Dynamic Range:

64 dB

Horizontal Pixel:

4964

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

3332

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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