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KAI-01150-QBA-JD-BA

Onsemi

KAI-01150-QBA-JD-BA by Onsemi

KAI-01150-QBA-JD-BA by Onsemi is an image sensor with 5.5X5.5 um pixel size, 1280x720 resolution, and 64 dB dynamic range. It is suitable for applications requiring high-quality imaging in a compact form factor, such as surveillance cameras and industrial machine vision systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,237 parts In-Stock

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Digiode

USA . 1,915 parts In-Stock

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1,915

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Distributors (Availability)

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AZTECH Wire

Italy . 162 parts In-Stock

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$11.160

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162

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SupplyDigital Components

Austria . 4,980 parts In-Stock

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4,980

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Kulean Microsystems

USA . 2,897 parts In-Stock

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TANS Electronics

Latvia . 2,101 parts In-Stock

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Problanco Electronics

Mexico . 864 parts In-Stock

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UHIMA Technologies

Türkiye . 676 parts In-Stock

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676

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Corphita

USA . 435 parts In-Stock

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Corohmni

South Africa . 305 parts In-Stock

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Overview

Capture stunning images with the KAI-01150-QBA-JD-BA image sensor by Onsemi. Known for their top-notch quality and advanced technology, Onsemi delivers exceptional performance in every product they create. This image sensor is perfect for a wide range of applications, offering crystal-clear images and precise details. With its high dynamic range and compact design, this sensor provides unmatched value and benefits to customers looking to elevate their imaging experience. Choose Onsemi for superior image sensors that exceed expectations.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for high resolution images to be captured with fine detail.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage provides flexibility in power supply options and can improve the overall performance of the sensor.

Body Width: 20.07 inch

The wide body width allows for more space for components and circuitry, potentially leading to better functionality and performance.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality image capture, making them a popular choice for professional imaging applications.

Package Shape or Style: RECTANGULAR

Rectangular package shape can make it easier to integrate the sensor into various systems and setups.

Minimum Supply Voltage: 14.5 V

The relatively low minimum supply voltage can help in power efficiency and provide a wider range of power sources for the sensor.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this sensor can be used in a variety of environmental conditions without overheating.

Horizontal Pixel: 1280

Higher horizontal pixel count allows for wide, detailed images to be captured.

Minimum Operating Temperature: -50 °C

The wide temperature range of -50 to 70 °C ensures that the sensor can operate in extreme cold conditions without any issues.

Dynamic Range: 64 dB

A 64 dB dynamic range enables the sensor to capture a wide range of light intensities, resulting in high-quality images with good contrast.

Vertical Pixel: 720

The vertical pixel count of 720 allows for images with good resolution in the vertical direction.

Body Length/Diameter: 33.02 mm

A compact body length/diameter of 33.02 mm makes this sensor easy to integrate into various devices and systems.

Optical Format (inch): 1/2

The 1/2 inch optical format is a common size for image sensors, making it compatible with many lenses and imaging systems.

Termination Type: SOLDER

Solder termination type provides a reliable and durable connection for the sensor, ensuring stable performance over time.

Array Type: INTERLINE

Interline array type is known for its fast data readout speed, making this sensor suitable for applications where high-speed imaging is required.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature makes it easy to securely install the sensor on circuit boards or other surfaces, ensuring stable performance during operation.

Technical Specifications

Image Sensors KAI-01150-QBA-JD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS SENSITIVITY OF 34 MICRO VOLT PER ELECTRON; ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Height:

3.33 mm

Body Length/Diameter:

33.02 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1280

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1/2

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

720

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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