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CQF25C/D42

NXP Semiconductors

CQF25C/D42 by NXP Semiconductors

CQF25C/D42 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 3,565 parts In-Stock

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Digiode

USA . 1,366 parts In-Stock

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Anansix

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One Stop Electronics

USA . 1,448 parts In-Stock

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Native Components

USA . 553 parts In-Stock

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Northwest PG Solutions

USA . 1,711 parts In-Stock

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$46.357

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UNI Independent Distributors

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Corphita

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Overview

Elevate your projects with the CQF25C/D42 laser diode from NXP Semiconductors, a trusted leader in high-quality optoelectronic components. Designed for reliability and efficiency, this diode excels in diverse applications, from industrial automation to medical devices. Experience unparalleled performance with its robust temperature range and fast response time, ensuring your innovations run smoothly while delivering maximum value to your customers.

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

This low forward current ensures energy efficiency, making the laser diode an economical choice for applications requiring sustained operation.

Peak Wavelength: 875 nm

The 875 nm wavelength is optimal for infrared applications, allowing for effective use in various fields such as sensing and data transmission.

Optoelectronic Type: LASER DIODE

As a laser diode, this product delivers coherent light, providing strong performance in tasks such as optical communications and medical applications.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can perform reliably in moderate thermal environments, ensuring durability in diverse applications.

Minimum Operating Temperature: -10 °C

The ability to operate down to -10 °C allows for versatility in deployment across various climatic conditions and environments.

Maximum Response Time: 0.5 ns

A fast response time of 0.5 ns makes this laser diode suitable for high-speed applications, ensuring quick and efficient information transfer.

Semiconductor Material: AlGaAs

Using AlGaAs as a semiconductor material enhances the efficiency and performance of the laser diode in infrared applications, offering better output and stability.

Spectral Bandwidth: 4.5 nm

A spectral bandwidth of 4.5 nm ensures that the laser diode can be used in applications requiring a precise wavelength while still accommodating slight variations.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides robust mechanical support, making the installation process straightforward and reliable for various circuit designs.

Maximum Forward Voltage: 2.5 V

A maximum forward voltage of 2.5 V makes this laser diode compatible with low-voltage circuitry, promoting ease of integration in electronic devices.

Technical Specifications

Laser Diodes CQF25C/D42 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

875

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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