Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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CQF25C/D42 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.
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This low forward current ensures energy efficiency, making the laser diode an economical choice for applications requiring sustained operation.
The 875 nm wavelength is optimal for infrared applications, allowing for effective use in various fields such as sensing and data transmission.
As a laser diode, this product delivers coherent light, providing strong performance in tasks such as optical communications and medical applications.
With a maximum operating temperature of 60 °C, this laser diode can perform reliably in moderate thermal environments, ensuring durability in diverse applications.
The ability to operate down to -10 °C allows for versatility in deployment across various climatic conditions and environments.
A fast response time of 0.5 ns makes this laser diode suitable for high-speed applications, ensuring quick and efficient information transfer.
Using AlGaAs as a semiconductor material enhances the efficiency and performance of the laser diode in infrared applications, offering better output and stability.
A spectral bandwidth of 4.5 nm ensures that the laser diode can be used in applications requiring a precise wavelength while still accommodating slight variations.
The through-hole mounting feature provides robust mechanical support, making the installation process straightforward and reliable for various circuit designs.
A maximum forward voltage of 2.5 V makes this laser diode compatible with low-voltage circuitry, promoting ease of integration in electronic devices.
Laser Diodes CQF25C/D42 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors
Maximum Forward Current:
Maximum Forward Voltage:
Mounting Feature:
Maximum Operating Temperature:
Minimum Operating Temperature:
Optoelectronic Type:
Peak Wavelength (nm):
Maximum Response Time:
Semiconductor Material:
Spectral Bandwidth:
Sub-Category:
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
4554
Jw Miller Magnetics
Other Semiconductors;
RC0603FR-0710KL
Yageo
Yageo's RC0603FR-0710KL is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in electronics requiring precise resistance values.
ST3485EBDR
STMicroelectronics
ST3485EBDR by STMicroelectronics is a Line Driver & Receiver with 3.3V power supply, EIA-422/EIA-485 interface standard, and 30ns max transmit delay. It is ideal for industrial applications requiring differential output and operates in temperatures ranging from -40 to 85°C.
SMBJ18CA
Silicon Standard
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Central Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
LM358N
Texas Instruments
LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.
M24308/2-1F
Cristek Interconnects
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; No. of Rows Loaded: 2; Shell Size: 1/E; Filter Feature: NO;
1N4148
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Positronic Industries
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Body or Shell Style: RECEPTACLE;
BAV99WT1G
Onsemi
BAV99WT1G by Onsemi is a series connected diode with 0.006 us reverse recovery time. It is a small outline rectifier diode with 70V peak reverse voltage, ideal for surface mount applications in electronics requiring fast switching and low forward voltage drop.
Rfe International
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Forward Voltage (VF): 1 V; Config: SINGLE;
LL4148
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N7002
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Minimum Operating Temperature: -55 Cel;
Temic Semiconductors
RECTIFIER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
NC7WZ07P6X
The Onsemi NC7WZ07P6X is a logic gate with 2 functions, featuring a propagation delay of 4.8 ns at 1.8V supply voltage. With open-drain output characteristics, it operates in industrial temperatures from -40 to 85°C. Ideal for applications requiring fast signal processing and low power consumption in compact designs.
Bharat Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BAV99
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
CRCW080510K0FKEA
Vishay Intertechnology
Vishay Intertechnology's CRCW080510K0FKEA is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 reference standard compliance and -55 to 155 °C operating temperature range.
Rochester Electronics
NX8571SA606-CA
Renesas Electronics
LASER DIODE; Maximum Forward Current: .01 A; Minimum Operating Temperature: -20 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;
NX8571SC441-BA-AZ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A;
DL-3150-105
DL-3150-105 by Onsemi is a GaAs LASER DIODE with peak wavelength of 790nm. It operates b/w -10 to 70 °C, with max forward current of 0.06A and voltage of 2.3V. Ideal for optoelectronic applications requiring THROUGH HOLE MOUNTing.
NX8567SAS315-BC
LASER DIODE; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000000125 s; Peak Wavelength (nm): 1531; Maximum Forward Current: .15 A; Minimum Operating Temperature: -5 Cel;
CQF25A/D52
NXP Semiconductors
CQF25A/D52 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 820 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
NX6351GP27-AZ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Semiconductor Material: AlGaInAs; Peak Wavelength (nm): 1270; Maximum Forward Voltage: 2 V;
NX8560SJ610-CC
LASER DIODE; Maximum Forward Voltage: 2 V; Semiconductor Material: GaAs; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .00000000004 s; Peak Wavelength (nm): 1561;
NDL7551P
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Peak Wavelength (nm): 1550; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 60 Cel;
NX8570SC824-BA-AZ
LASER DIODE; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V;
NX8570SA373-BA
LASER DIODE; Peak Wavelength (nm): 1537; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;
HL7831G
LASER DIODE; Peak Wavelength (nm): 785; Shape: ROUND; Maximum Operating Temperature: 60 Cel; Nominal Output Power: 5 W; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE;
SDL3034-011
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel;
STH61004Z
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 1300; Maximum Forward Current: .12 A; Maximum Operating Temperature: 85 Cel;
NX8564LE485-CC
LASER DIODE; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000000125 s; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1548;
NX8570SA509-CA
LASER DIODE; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1551;
DL-LS1017
DL-LS1017 by Onsemi is a Laser Diode with 0.11A max forward current, peak wavelength of 658nm, and max operating temp of 60 °C. Ideal for applications requiring through hole mounting, it operates b/w -10°C to 60°C and has a max forward voltage of 3.5V.
NX8565LE311-CC
LASER DIODE; Mounting Feature: SURFACE MOUNT; Semiconductor Material: GaAs; Peak Wavelength (nm): 1531; Maximum Response Time: .000000000125 s; Maximum Forward Current: .1 A;
TOLD320BCB
Toshiba
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Maximum Operating Temperature: 80 Cel; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1310;
TOLD300S
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 15 Cel; Peak Wavelength (nm): 1310; Maximum Forward Current: .15 A; Maximum Forward Voltage: 1.5 V;
HL6326G
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Semiconductor Material: AlGaInP; Nominal Output Power: 5 W; Peak Wavelength (nm): 635;
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CQF25B/D14
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000005 s; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 60 Cel; Spectral Bandwidth: 4.5 m;
CQF25A/D12
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Spectral Bandwidth: 4.5 m; Maximum Operating Temperature: 60 Cel; Maximum Response Time: .0000000005 s;
CQF23/D24
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Spectral Bandwidth: 2 m; Maximum Response Time: .0000000005 s; Maximum Forward Voltage: 2.5 V;
CQF25B/D12
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2.5 V; Spectral Bandwidth: 4.5 m; Minimum Operating Temperature: -10 Cel;
CQF25A/D14
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .15 A; Peak Wavelength (nm): 820;
CQF23/D52
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Maximum Forward Current: .07 A; Peak Wavelength (nm): 790; Maximum Forward Voltage: 2.5 V;
CQF25B/D24
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Semiconductor Material: AlGaAs; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 2.5 V;
CQF23/D12
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 2 m; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 60 Cel; Maximum Forward Current: .07 A;
CQF25A/D13
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 4.5 m; Maximum Forward Current: .15 A; Maximum Response Time: .0000000005 s; Peak Wavelength (nm): 820;
CQF23/D41
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Spectral Bandwidth: 2 m; Maximum Operating Temperature: 60 Cel; Maximum Forward Current: .07 A;
CQF25B/D11
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 850; Minimum Operating Temperature: -10 Cel;
CQF25A/D41
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Response Time: .0000000005 s; Semiconductor Material: AlGaAs; Maximum Forward Current: .15 A;
CQF23/D44
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Peak Wavelength (nm): 790; Maximum Forward Voltage: 2.5 V; Maximum Response Time: .0000000005 s;
CQF25B/D13
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000005 s; Maximum Forward Voltage: 2.5 V; Spectral Bandwidth: 4.5 m; Minimum Operating Temperature: -10 Cel;
CQF23/D14
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Spectral Bandwidth: 2 m; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .07 A;
CQF25A/D11
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Response Time: .0000000005 s; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 60 Cel;
CQF23/D11
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 2.5 V;
CQF23/D13
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000005 s; Spectral Bandwidth: 2 m; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel;
CQF23/D43
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Maximum Operating Temperature: 60 Cel; Spectral Bandwidth: 2 m; Maximum Response Time: .0000000005 s;
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 4.5 m; Semiconductor Material: AlGaAs; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .15 A;
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