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CQF23/D24

NXP Semiconductors

CQF23/D24 by NXP Semiconductors

CQF23/D24 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 790 nm and a max forward current of 0.07 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 2,671 parts In-Stock

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Digiode

USA . 794 parts In-Stock

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Anansix

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Native Components

USA . 893 parts In-Stock

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$9.292

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Northwest PG Solutions

USA . 1,681 parts In-Stock

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One Stop Electronics

USA . 255 parts In-Stock

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Corphita

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UNI Independent Distributors

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Overview

Elevate your projects with the CQF23/D24 Laser Diode from NXP Semiconductors, a leader in cutting-edge technology. Designed for versatility and reliability, this diode delivers exceptional performance across various applications, from industrial sensing to consumer electronics. With its robust temperature resilience and precise wavelength emission, the CQF23/D24 ensures quality and efficiency, providing you with unmatched value and innovation for your next big idea.

Feature Benefit Bullets

Maximum Forward Current: 0.07 A

The low maximum forward current ensures efficient operation while minimizing heat generation, making this laser diode ideal for applications requiring low power consumption.

Peak Wavelength: 790 nm

The 790 nm peak wavelength makes this laser diode suitable for applications in optical communication and spectroscopy, offering effective performance in infrared light applications.

Optoelectronic Type: LASER DIODE

As a laser diode, this product provides coherent light emission, which is essential for high-precision applications like fiber optics and laser printing.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode is reliable in a variety of environments, suitable for both indoor and outdoor applications.

Minimum Operating Temperature: -10 °C

The ability to operate at low temperatures down to -10 °C expands its usability in colder climates or specialized industrial applications.

Maximum Response Time: 0.5 ns

The extremely fast response time of 0.5 nanoseconds allows for high-speed data transmission, making this laser diode ideal for advanced communication systems.

Semiconductor Material: AlGaAs

Utilizing AlGaAs as the semiconductor material provides high efficiency and performance across a wide range of applications, including optical sensing and telecommunications.

Spectral Bandwidth: 2 nm

A spectral bandwidth of 2 nm allows for greater versatility in applications, enabling more precise wavelength selection for applications in sensors and laser-based systems.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount feature simplifies the integration of this laser diode into various circuit boards, enhancing its usability in DIY projects and custom electronic designs.

Maximum Forward Voltage: 2.5 V

With a maximum forward voltage of 2.5 V, this laser diode operates efficiently, making it ideal for low-voltage electronic systems and reducing overall system power requirements.

Technical Specifications

Laser Diodes CQF23/D24 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.07 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

790

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

2 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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