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CQF25A/D41

NXP Semiconductors

CQF25A/D41 by NXP Semiconductors

CQF25A/D41 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 820 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,322 parts In-Stock

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Anansix

USA . 1,599 parts In-Stock

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Digiode

USA . 828 parts In-Stock

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One Stop Electronics

USA . 175 parts In-Stock

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$19.100

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UNI Independent Distributors

Spain . 2,859 parts In-Stock

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Northwest PG Solutions

USA . 1,925 parts In-Stock

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Corphita

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Native Components

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Overview

Unleash innovation with the CQF25A/D41 laser diode from NXP Semiconductors—your trusted partner in cutting-edge optoelectronics. Engineered for reliability and precision, this high-performance component excels in diverse applications, from medical devices to advanced industrial systems. With its superior efficiency and durability, the CQF25A/D41 ensures optimal performance, empowering you to elevate your projects while benefiting from NXP's renowned quality and expertise.

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

This optimal forward current ensures efficient performance while minimizing energy consumption, making it suitable for various applications.

Peak Wavelength: 820 nm

The 820 nm wavelength is ideal for applications like optical communications and IR sensing, providing effective operation in specific environments.

Optoelectronic Type: LASER DIODE

As a laser diode, this product offers high brightness and coherence, which are essential for precision applications in measurement and sensing.

Maximum Operating Temperature: 60 °C

A maximum operating temperature of 60 °C allows the diode to function well in moderately high thermal conditions, enhancing its versatility.

Minimum Operating Temperature: -10 °C

With a minimum operating temperature of -10 °C, this laser diode is suitable for outdoor and low-temperature applications.

Maximum Response Time: 0.0000000005 s

An ultra-fast response time ensures high-speed communication capabilities, making it ideal for time-sensitive applications.

Semiconductor Material: AlGaAs

The AlGaAs semiconductor material offers excellent efficiency and performance, contributing to the reliability and longevity of the diode.

Spectral Bandwidth: 4.5 nm

A narrow spectral bandwidth is beneficial for applications requiring precise wavelength control, enhancing signal integrity.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount feature facilitates easy installation and secure positioning in various electronic assemblies.

Maximum Forward Voltage: 2.5 V

A low maximum forward voltage of 2.5 V allows for compatibility with a wide range of electronic systems, ensuring flexibility in design.

Technical Specifications

Laser Diodes CQF25A/D41 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

820

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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