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SDL3034-201

Onsemi

SDL3034-201 by Onsemi

SDL3034-201 by Onsemi is a GaAlAs LASER DIODE with peak wavelength of 780nm. It operates b/w -10 °C to 60°C, suitable for through hole mounting applications in optoelectronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,771 parts In-Stock

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Digiode

USA . 879 parts In-Stock

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Kulean Microsystems

USA . 7,670 parts In-Stock

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SupplyDigital Components

Austria . 5,446 parts In-Stock

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Corphita

USA . 1,989 parts In-Stock

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Problanco Electronics

Mexico . 1,418 parts In-Stock

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TANS Electronics

Latvia . 650 parts In-Stock

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UHIMA Technologies

Türkiye . 149 parts In-Stock

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Corohmni

South Africa . 97 parts In-Stock

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Overview

Elevate your projects with the SDL3034-201 Laser Diode from Onsemi, a trusted manufacturer known for its top-notch quality. Ideal for a wide range of applications, this laser diode boasts a peak wavelength of 780nm and a GaAlAs semiconductor material for superior performance. With a maximum operating temperature of 60 °C and a minimum of -10°C, this through-hole mount device delivers reliability and precision. Experience the value and benefits of this cutting-edge product, providing customers with unmatched advantages in their projects.

Feature Benefit Bullets

Peak Wavelength (nm): 780

The 780nm wavelength is commonly used in various applications such as material processing, medical equipment, and telecommunications, making this laser diode versatile and compatible with a wide range of devices.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers a coherent and intense beam of light, making it suitable for applications requiring precision and accuracy, such as laser engraving or medical procedures.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can withstand relatively high temperatures, ensuring stable performance even in challenging environments.

Minimum Operating Temperature: -10 °C

The ability to operate at temperatures as low as -10 °C makes this laser diode suitable for use in a wide range of settings, including industrial and medical applications that may require operation in cold environments.

Semiconductor Material: GaAlAs

GaAlAs semiconductor material offers high efficiency and reliability, ensuring long-lasting performance and consistent output from this laser diode.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies installation and provides a secure and stable connection, making it easier to integrate this laser diode into various electronic systems.

Technical Specifications

Laser Diodes SDL3034-201 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

780

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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