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SDL3039-011

Onsemi

SDL3039-011 by Onsemi

SDL3039-011 by Onsemi is a 670nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,287 parts In-Stock

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Vyrian

USA . 668 parts In-Stock

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668

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Problanco Electronics

Mexico . 5,934 parts In-Stock

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Kulean Microsystems

USA . 5,184 parts In-Stock

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SupplyDigital Components

Austria . 3,747 parts In-Stock

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TANS Electronics

Latvia . 2,746 parts In-Stock

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Corphita

USA . 1,154 parts In-Stock

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Corohmni

South Africa . 429 parts In-Stock

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UHIMA Technologies

Türkiye . 207 parts In-Stock

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Overview

Enhance your projects with the SDL3039-011 laser diode by Onsemi. Manufactured to the highest standards, this cutting-edge technology offers precise peak wavelength of 670nm for optimal performance. Ideal for a variety of applications, from industrial to medical equipment, this laser diode ensures reliability and longevity. Experience the value of superior quality and efficiency with the SDL3039-011, providing unmatched benefits and advantages to elevate your work to the next level.

Feature Benefit Bullets

Peak Wavelength (nm): 670

The peak wavelength of 670nm makes this laser diode suitable for applications requiring a specific wavelength, such as medical devices or laser pointers.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high optical power and efficiency, making it ideal for applications like telecommunications, barcode scanners, and laser printers.

Maximum Operating Temperature: 50 °C

The high maximum operating temperature of 50 °C ensures the reliability and durability of this laser diode in various operating conditions.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C allows this laser diode to function effectively in cold environments, expanding its range of applications.

Semiconductor Material: GaAlAs

The GaAlAs semiconductor material used in this laser diode offers high efficiency and reliability, making it a preferred choice for industrial and scientific applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature of this laser diode enables easy and secure installation on circuit boards, ensuring stable performance in various equipment designs.

Technical Specifications

Laser Diodes SDL3039-011 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

670

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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