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SDL3038-021

Onsemi

SDL3038-021 by Onsemi

SDL3038-021 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 611 parts In-Stock

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Vyrian

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Problanco Electronics

Mexico . 6,752 parts In-Stock

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Kulean Microsystems

USA . 3,766 parts In-Stock

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TANS Electronics

Latvia . 3,682 parts In-Stock

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SupplyDigital Components

Austria . 2,472 parts In-Stock

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UHIMA Technologies

Türkiye . 876 parts In-Stock

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Corphita

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Corohmni

South Africa . 391 parts In-Stock

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Overview

Unleash the power of precision with the SDL3038-021 by Onsemi. Crafted with meticulous attention to detail by a trusted manufacturer, this laser diode boasts peak performance at a wavelength of 640nm. Perfect for a wide range of applications, from industrial machinery to medical devices, this cutting-edge technology offers unparalleled reliability and efficiency. Experience the value of seamless integration and superior quality with the SDL3038-021 - your key to unlocking endless possibilities.

Feature Benefit Bullets

Peak Wavelength (nm): 640

The peak wavelength of 640nm makes this laser diode ideal for applications that require precise and specific wavelength outputs.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers efficient and coherent light output, making it suitable for various optical and communication applications.

Maximum Operating Temperature: 40 °C

With a maximum operating temperature of 40 °C, this laser diode can withstand high temperatures, ensuring reliable performance in demanding environments.

Minimum Operating Temperature: -10 °C

The ability to operate at temperatures as low as -10 °C makes this laser diode suitable for use in cold environments or applications that require a wide temperature range.

Semiconductor Material: AlGaInP

The AlGaInP semiconductor material used in this laser diode offers high efficiency and reliability, resulting in stable and consistent performance over time.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature makes it easy to install and secure the laser diode in place, ensuring stable and precise alignment for optimal performance.

Technical Specifications

Laser Diodes SDL3038-021 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

640

Semiconductor Material:

AlGaInP

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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