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DL-3148-023A

Onsemi

DL-3148-023A by Onsemi

DL-3148-023A by Onsemi is a LASER DIODE with Peak Wavelength of 635nm, Max Forward Current of 0.045A, and Max Forward Voltage of 2.4V. It operates b/w -10 °C to 40°C, suitable for THROUGH HOLE MOUNT applications in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 782 parts In-Stock

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Vyrian

USA . 722 parts In-Stock

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722

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Distributors (Availability)

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Northwest PG Solutions

USA . 495 parts In-Stock

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$2.823

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495

$2.823

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SupplyDigital Components

Austria . 6,095 parts In-Stock

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6,095

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Kulean Microsystems

USA . 3,959 parts In-Stock

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3,959

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TANS Electronics

Latvia . 3,081 parts In-Stock

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Corphita

USA . 481 parts In-Stock

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481

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Native Components

USA . 431 parts In-Stock

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$2.490

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431

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$2.490

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UHIMA Technologies

Türkiye . 431 parts In-Stock

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431

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Corohmni

South Africa . 200 parts In-Stock

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Problanco Electronics

Mexico . 3 parts In-Stock

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Overview

Unleash the power of precision with the DL-3148-023A by Onsemi. Crafted with unwavering quality and expertise, this laser diode promises unparalleled performance in a variety of applications. Whether you're looking to enhance your industrial processes or revolutionize your healthcare technologies, this product delivers exceptional value, reliability, and efficiency. Trust Onsemi to provide cutting-edge solutions that push the boundaries of what's possible. Elevate your projects with the DL-3148-023A and experience the difference today.

Feature Benefit Bullets

Maximum Forward Current: 0.045 A

With a low maximum forward current, this laser diode consumes minimal power, making it efficient and cost-effective.

Peak Wavelength (nm): 635

The peak wavelength of 635 nm indicates a specific color output, which can be useful for certain applications that require precision in light output.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides coherent and focused light output, making it suitable for applications that require precision in illumination or data transmission.

Maximum Operating Temperature: 40 °C

With a high maximum operating temperature, this laser diode can withstand harsh environments or prolonged use without risk of overheating, ensuring reliability in various conditions.

Minimum Operating Temperature: -10 °C

The ability to operate at temperatures as low as -10 °C makes this laser diode versatile and suitable for a wide range of operating environments, including cold storage or outdoor applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and ensures secure positioning of the laser diode, making it easy to integrate into different systems or devices.

Maximum Forward Voltage: 2.4 V

With a low maximum forward voltage, this laser diode requires minimal input power to operate effectively, resulting in energy savings and extended battery life in portable devices.

Technical Specifications

Laser Diodes DL-3148-023A attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.045 A

Maximum Forward Voltage:

2.4 V

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

635

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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