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DL-3147-085

Onsemi

DL-3147-085 by Onsemi

DL-3147-085 by Onsemi is a LASER DIODE with Peak Wavelength of 650nm, Max Forward Current of 0.05A, and Max Forward Voltage of 2.6V. It operates b/w -10 °C to 80°C and is mounted through hole. Ideal for applications requiring precise laser emission in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,895 parts In-Stock

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Digiode

USA . 1,629 parts In-Stock

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Native Components

USA . 727 parts In-Stock

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$0.035

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$0.034

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$0.034

Problanco Electronics

Mexico . 4,986 parts In-Stock

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SupplyDigital Components

Austria . 3,214 parts In-Stock

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Corphita

USA . 2,108 parts In-Stock

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TANS Electronics

Latvia . 1,647 parts In-Stock

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Kulean Microsystems

USA . 1,378 parts In-Stock

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Northwest PG Solutions

USA . 1,050 parts In-Stock

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UHIMA Technologies

Türkiye . 276 parts In-Stock

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Corohmni

South Africa . 249 parts In-Stock

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Overview

Experience the cutting-edge technology of the DL-3147-085 Laser Diode by Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by professionals worldwide. Ideal for a wide range of applications, this laser diode offers unparalleled performance and precision. Enhance your projects with the DL-3147-085 and unlock a world of possibilities. Elevate your work to the next level with this exceptional product from Onsemi.

Feature Benefit Bullets

Maximum Forward Current: 0.05 A

With a maximum forward current of only 0.05 A, this laser diode is energy efficient while still providing a reliable output.

Peak Wavelength (nm): 650

The peak wavelength of 650 nm makes this laser diode ideal for applications requiring a specific wavelength of light.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high efficiency and precision in generating laser light for various applications.

Maximum Operating Temperature: 80 °C

With a maximum operating temperature of 80 °C, this laser diode can withstand higher temperature environments without compromising performance.

Minimum Operating Temperature: -10 °C

The minimum operating temperature of -10 °C ensures that this laser diode can also function effectively in colder conditions.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature provides a stable and secure way to install the laser diode, ensuring proper alignment and connection in various devices.

Maximum Forward Voltage: 2.6 V

With a maximum forward voltage of 2.6 V, this laser diode is efficient in converting electrical power into light output, resulting in energy savings.

Technical Specifications

Laser Diodes DL-3147-085 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.05 A

Maximum Forward Voltage:

2.6 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

650

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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