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DL3148-011

Onsemi

DL3148-011 by Onsemi

DL3148-011 by Onsemi is a LASER DIODE with 0.055A max forward current, 635nm peak wavelength, and -10 to 40 °C operating temp range. Ideal for applications requiring THROUGH HOLE MOUNT optoelectronics in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,963 parts In-Stock

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Vyrian

USA . 357 parts In-Stock

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Native Components

USA . 425 parts In-Stock

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$0.134

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$0.129

425

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Northwest PG Solutions

USA . 1,644 parts In-Stock

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$0.148

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$0.130

Problanco Electronics

Mexico . 5,388 parts In-Stock

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Kulean Microsystems

USA . 5,312 parts In-Stock

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Kepictronics

USA . 4,389 parts In-Stock

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SupplyDigital Components

Austria . 4,021 parts In-Stock

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Corphita

USA . 1,438 parts In-Stock

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TANS Electronics

Latvia . 658 parts In-Stock

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UHIMA Technologies

Türkiye . 554 parts In-Stock

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Corohmni

South Africa . 294 parts In-Stock

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Overview

Elevate your projects with the DL3148-011 by Onsemi, a top-quality laser diode that promises precision and reliability. Manufactured by Onsemi, a trusted leader in the industry, this laser diode offers peak performance in a wide range of applications. Whether you're working on industrial machinery, medical equipment, or consumer electronics, this laser diode delivers exceptional value, efficiency, and accuracy. Upgrade to the DL3148-011 and experience the difference in quality and performance that Onsemi brings to the table.

Feature Benefit Bullets

Maximum Forward Current: 0.055 A

With a low maximum forward current, this product is energy-efficient and reduces the risk of overheating, making it a reliable choice for long-term use.

Peak Wavelength (nm): 635

The 635 nm peak wavelength offers precise and consistent performance, making this laser diode suitable for applications requiring accuracy and stability.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides high coherence and efficiency, making it ideal for various laser applications such as medical devices, communication systems, and industrial equipment.

Maximum Operating Temperature: 40 °C

With a high maximum operating temperature, this laser diode can withstand elevated temperatures without compromising performance, ensuring reliable operation even in demanding environments.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature allows this laser diode to function effectively in cold environments, making it versatile for a wide range of applications.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount design simplifies the installation process and enhances stability, ensuring secure placement of the laser diode for consistent performance.

Technical Specifications

Laser Diodes DL3148-011 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.055 A

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

635

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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