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DL-3147-031

Onsemi

DL-3147-031 by Onsemi

DL-3147-031 by Onsemi is a Laser Diode with 0.05A max forward current, peak wavelength of 650nm, and max operating temp of 50 °C. Ideal for applications requiring through hole mounting such as laser modules, medical equipment, and industrial sensors.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,646 parts In-Stock

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1,646

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Digiode

USA . 1,273 parts In-Stock

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1,273

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 582 parts In-Stock

1+ parts

$0.086

100+ parts

-

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$0.083

582

$0.086

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$0.083

Northwest PG Solutions

USA . 464 parts In-Stock

1+ parts

$0.095

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-

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$0.083

464

$0.095

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$0.083

Problanco Electronics

Mexico . 4,879 parts In-Stock

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4,879

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Corphita

USA . 1,319 parts In-Stock

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1,319

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SupplyDigital Components

Austria . 1,184 parts In-Stock

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Kulean Microsystems

USA . 1,060 parts In-Stock

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1,060

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TANS Electronics

Latvia . 824 parts In-Stock

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UHIMA Technologies

Türkiye . 397 parts In-Stock

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Corohmni

South Africa . 208 parts In-Stock

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Overview

Experience cutting-edge technology with the DL-3147-031 by Onsemi, a leading manufacturer in the industry. Laser Diodes are revolutionizing various applications, from telecommunications to medical equipment. With a peak wavelength of 650nm and high-quality construction, this product offers unparalleled performance and reliability. Say goodbye to downtime and hello to seamless operations with the DL-3147-031.

Feature Benefit Bullets

Maximum Forward Current: 0.05 A

The low forward current consumption ensures energy efficiency and longevity of the laser diode, making it a cost-effective choice.

Peak Wavelength (nm): 650

The peak wavelength of 650nm is ideal for various applications including telecommunications, medical devices, and industrial sensors.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high precision and efficiency in light generation, making it suitable for tasks that require focused laser beams.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can withstand high temperatures without compromising performance, making it versatile for different environments.

Minimum Operating Temperature: -10 °C

The ability to operate in temperatures as low as -10 °C ensures this laser diode's reliability in cold environments, making it suitable for a wide range of applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides easy installation and secure placement of the laser diode, enhancing its stability and durability.

Maximum Forward Voltage: 2.6 V

The low forward voltage requirement of 2.6V ensures compatibility with various power sources and reduces energy consumption, making this laser diode a cost-effective and efficient choice.

Technical Specifications

Laser Diodes DL-3147-031 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.05 A

Maximum Forward Voltage:

2.6 V

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

650

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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