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DL3147-261

Onsemi

DL3147-261 by Onsemi

DL3147-261 by Onsemi is a 660nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 70°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,864 parts In-Stock

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Digiode

USA . 1,247 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 499 parts In-Stock

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$0.461

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$0.443

499

$0.461

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$0.443

Northwest PG Solutions

USA . 1,008 parts In-Stock

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$0.507

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$0.447

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$0.507

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$0.447

TANS Electronics

Latvia . 7,136 parts In-Stock

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Kulean Microsystems

USA . 3,191 parts In-Stock

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SupplyDigital Components

Austria . 2,599 parts In-Stock

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Corphita

USA . 2,304 parts In-Stock

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Problanco Electronics

Mexico . 1,715 parts In-Stock

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Corohmni

South Africa . 120 parts In-Stock

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UHIMA Technologies

Türkiye . 8 parts In-Stock

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Overview

Enhance your projects with the DL3147-261 laser diode by Onsemi. Known for their top-notch quality and reliability, Onsemi produces cutting-edge optoelectronic components that deliver exceptional performance. This laser diode, with a peak wavelength of 660nm, is perfect for a wide range of applications. Whether you're working on medical equipment, industrial machinery, or consumer electronics, the DL3147-261 offers unmatched value, precision, and efficiency. Upgrade your designs today with this superior product from Onsemi.

Feature Benefit Bullets

Peak Wavelength (nm): 660

This specific wavelength is ideal for various applications such as medical devices, laser alignment, and barcode scanners.

Optoelectronic Type: LASER DIODE

Being a laser diode ensures high efficiency, reliability, and precise control for consistent performance.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this laser diode can withstand challenging environments without performance degradation.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature allows for versatility in operating conditions, making it suitable for a range of applications.

Semiconductor Material: AlGaInP

AlGaInP is known for its high efficiency and stable performance, making it a reliable choice for laser diodes.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides secure fixing and easy integration into various electronic devices.

Technical Specifications

Laser Diodes DL3147-261 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

660

Semiconductor Material:

AlGaInP

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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