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SDL4038-011

Onsemi

SDL4038-011 by Onsemi

SDL4038-011 by Onsemi is a 645nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, suitable for THROUGH HOLE MOUNT applications like laser pointers and medical devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,478 parts In-Stock

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Digiode

USA . 379 parts In-Stock

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379

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SupplyDigital Components

Austria . 7,974 parts In-Stock

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Kulean Microsystems

USA . 6,813 parts In-Stock

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Corphita

USA . 2,033 parts In-Stock

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UHIMA Technologies

Türkiye . 789 parts In-Stock

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Problanco Electronics

Mexico . 603 parts In-Stock

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Corohmni

South Africa . 347 parts In-Stock

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TANS Electronics

Latvia . 317 parts In-Stock

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Overview

Discover the cutting-edge SDL4038-011 Laser Diode by Onsemi, a leading manufacturer known for superior quality and reliability. Ideal for applications in industrial, medical, and consumer electronics, this innovative product offers unmatched performance and efficiency. With a peak wavelength of 645nm and a wide operating temperature range, customers can trust in the value and benefits this laser diode brings to their projects. Upgrade your technology with Onsemi's SDL4038-011 and experience the advantage of top-notch quality and precision.

Feature Benefit Bullets

Peak Wavelength (nm): 645

The specific peak wavelength of 645nm makes this laser diode suitable for various applications such as barcode scanning, laser pointers, and medical instruments.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides a coherent and focused beam of light, making it ideal for precision tasks like cutting, engraving, and measurement.

Maximum Operating Temperature: 40 °C

With a high maximum operating temperature of 40 °C, this laser diode is reliable and can withstand extended periods of use without overheating.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C allows this laser diode to function effectively even in colder environments, ensuring versatile usage.

Semiconductor Material: AlGaInP

The use of AlGaInP semiconductor material in this laser diode offers superior performance in terms of efficiency and durability compared to other materials.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature makes installation and integration of this laser diode easier and more secure, ensuring stability during operation.

Technical Specifications

Laser Diodes SDL4038-011 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

645

Semiconductor Material:

AlGaInP

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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