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SDL4032-101

Onsemi

SDL4032-101 by Onsemi

SDL4032-101 by Onsemi is an 845nm LASER DIODE with GaAlAs semiconductor material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications like optical sensors and medical devices.

Median Price

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Digiode

USA . 490 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 7,244 parts In-Stock

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TANS Electronics

Latvia . 4,391 parts In-Stock

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Kulean Microsystems

USA . 4,054 parts In-Stock

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Corphita

USA . 1,325 parts In-Stock

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UHIMA Technologies

Türkiye . 642 parts In-Stock

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Problanco Electronics

Mexico . 526 parts In-Stock

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Corohmni

South Africa . 141 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the SDL4032-101 Laser Diode. This cutting-edge optoelectronic component offers peak performance at a wavelength of 845nm, making it ideal for a wide range of applications. From medical devices to industrial sensors, this laser diode delivers precision and efficiency, ensuring exceptional results every time. Trust Onsemi for innovative technology and unparalleled value in the world of semiconductor components.

Feature Benefit Bullets

Peak Wavelength (nm): 845

The specific peak wavelength of 845nm indicates optimized performance for applications requiring this particular wavelength range.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high efficiency and precise control in various optoelectronic applications.

Maximum Operating Temperature: 50 °C

With a high maximum operating temperature of 50 °C, this laser diode can withstand heat-intensive environments, increasing its durability.

Minimum Operating Temperature: -10 °C

Even in colder environments down to -10 °C, this laser diode can continue to operate effectively, providing versatility in usage.

Semiconductor Material: GaAlAs

The use of GaAlAs semiconductor material ensures high performance, stability, and reliability in the laser diode's operation.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and improves the overall mechanical stability of the laser diode.

Technical Specifications

Laser Diodes SDL4032-101 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

845

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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