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SDL4030-201

Onsemi

SDL4030-201 by Onsemi

SDL4030-201 by Onsemi is a GaAlAs LASER DIODE with peak wavelength of 790nm. It operates b/w -10 °C to 50°C, suitable for through hole mounting applications. Ideal for laser-based systems requiring precise optical output in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,435 parts In-Stock

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2,435

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Digiode

USA . 991 parts In-Stock

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991

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Kulean Microsystems

USA . 8,303 parts In-Stock

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8,303

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SupplyDigital Components

Austria . 7,946 parts In-Stock

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7,946

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TANS Electronics

Latvia . 4,659 parts In-Stock

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4,659

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Problanco Electronics

Mexico . 3,642 parts In-Stock

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Corphita

USA . 1,781 parts In-Stock

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1,781

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UHIMA Technologies

Türkiye . 697 parts In-Stock

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697

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Corohmni

South Africa . 82 parts In-Stock

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Overview

Enhance your projects with the SDL4030-201 by Onsemi, a top-quality laser diode that promises superior performance and reliability. With Onsemi's reputation for innovation and excellence in manufacturing, you can trust that this product will exceed your expectations. Ideal for a wide range of applications, from telecommunications to medical devices, this laser diode offers exceptional value, efficiency, and precision. Experience the benefits of cutting-edge technology with the SDL4030-201 and take your projects to the next level.

Feature Benefit Bullets

Peak Wavelength (nm): 790

This specific wavelength of 790nm makes this laser diode suitable for applications requiring precise and targeted light output.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high efficiency and accuracy in light emission, making it ideal for various laser applications.

Maximum Operating Temperature: 50 °C

With a high maximum operating temperature of 50 °C, this laser diode can withstand heat and operate reliably in various environments.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C ensures that this laser diode can perform well even in colder conditions without any issues.

Semiconductor Material: GaAlAs

The use of GaAlAs semiconductor material offers high efficiency and durability, providing long-lasting performance for the laser diode.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature ensures easy installation and secure placement of the laser diode in various electronic devices or equipment.

Technical Specifications

Laser Diodes SDL4030-201 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

790

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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