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SDL8032-201

Onsemi

SDL8032-201 by Onsemi

SDL8032-201 by Onsemi is an 830nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications like optical sensors and medical devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 867 parts In-Stock

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Digiode

USA . 51 parts In-Stock

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Problanco Electronics

Mexico . 8,393 parts In-Stock

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TANS Electronics

Latvia . 4,411 parts In-Stock

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SupplyDigital Components

Austria . 4,066 parts In-Stock

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Kulean Microsystems

USA . 2,841 parts In-Stock

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Corphita

USA . 2,357 parts In-Stock

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UHIMA Technologies

Türkiye . 492 parts In-Stock

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Corohmni

South Africa . 234 parts In-Stock

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Overview

Discover the SDL8032-201 by Onsemi, a top-quality laser diode that offers unparalleled precision and reliability. Onsemi is known for its cutting-edge technology and commitment to excellence in manufacturing. Ideal for a wide range of applications, this laser diode provides superior performance in various industries. Experience the value and benefits that this product brings, with its advanced features and capabilities. Take your projects to the next level with the SDL8032-201 by Onsemi.

Feature Benefit Bullets

Peak Wavelength (nm): 830

The 830nm peak wavelength provides a good balance between penetration depth and precision, making it suitable for various applications such as medical devices and industrial processes.

Optoelectronic Type: LASER DIODE

Being a laser diode ensures high efficiency and reliability in converting electrical energy into optical energy, making it an excellent choice for continuous operation and precision tasks.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can withstand high temperatures, making it suitable for industrial environments where heat may be a factor.

Minimum Operating Temperature: -10 °C

The ability to operate at temperatures as low as -10 °C allows for versatility in usage scenarios, including cold storage facilities or outdoor applications in colder climates.

Semiconductor Material: GaAlAs

GaAlAs semiconductor material offers high power output and reliability, making this laser diode a durable and efficient choice for demanding tasks that require consistent performance.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and provides a secure attachment, ensuring stability and accurate alignment for consistent laser beam emission.

Technical Specifications

Laser Diodes SDL8032-201 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

830

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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