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SDL9952-001

Onsemi

SDL9952-001 by Onsemi

SDL9952-001 by Onsemi is an 830nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,494 parts In-Stock

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Vyrian

USA . 1,044 parts In-Stock

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TANS Electronics

Latvia . 6,742 parts In-Stock

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Kulean Microsystems

USA . 4,937 parts In-Stock

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SupplyDigital Components

Austria . 4,736 parts In-Stock

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Corphita

USA . 2,074 parts In-Stock

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Problanco Electronics

Mexico . 1,756 parts In-Stock

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Corohmni

South Africa . 282 parts In-Stock

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UHIMA Technologies

Türkiye . 8 parts In-Stock

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Overview

Discover the SDL9952-001 by Onsemi, a premium-quality Laser Diode designed to deliver exceptional performance and reliability. With a peak wavelength of 830nm, this cutting-edge product is perfect for a wide range of applications. Onsemi, known for its innovative solutions, ensures that this laser diode meets the highest industry standards. Experience the value and benefits of this versatile component, from precise medical equipment to advanced industrial systems. Upgrade your technology with the SDL9952-001 and unlock endless possibilities.

Feature Benefit Bullets

Peak Wavelength: 830 nm

The 830nm peak wavelength is ideal for various applications such as communications, sensing, and medical devices.

Optoelectronic Type: LASER DIODE

The use of laser diodes ensures high efficiency, reliability, and precision in the performance of the product.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can withstand high temperatures, making it suitable for demanding environments.

Minimum Operating Temperature: -10 °C

The ability to operate at temperatures as low as -10 °C enables this laser diode to function effectively in a wide range of conditions.

Semiconductor Material: GaAlAs

The GaAlAs semiconductor material offers excellent performance characteristics such as high efficiency and reliability, making it a superior choice for laser diodes.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure installation of the laser diode, ensuring stable operation even in dynamic environments.

Technical Specifications

Laser Diodes SDL9952-001 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

830

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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