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SDL8032-101

Onsemi

SDL8032-101 by Onsemi

SDL8032-101 by Onsemi is an 850nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in a wide temperature range.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,246 parts In-Stock

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Vyrian

USA . 323 parts In-Stock

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Problanco Electronics

Mexico . 4,918 parts In-Stock

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Corphita

USA . 2,175 parts In-Stock

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Kulean Microsystems

USA . 1,600 parts In-Stock

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TANS Electronics

Latvia . 1,072 parts In-Stock

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SupplyDigital Components

Austria . 590 parts In-Stock

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Corohmni

South Africa . 387 parts In-Stock

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UHIMA Technologies

Türkiye . 308 parts In-Stock

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Overview

Enhance your technological projects with the SDL8032-101 laser diode by Onsemi. Known for its superior quality and reliability, Onsemi offers cutting-edge solutions in the optoelectronic industry. Ideal for a wide range of applications, this laser diode operates at peak wavelength of 850nm, providing precise and consistent performance. With a maximum operating temperature of 50 °C and a minimum of -10°C, this GaAlAs semiconductor material guarantees durability and efficiency. Elevate your projects with the SDL8032-101 and experience the value and benefits that Onsemi's advanced technology has to offer.

Feature Benefit Bullets

Peak Wavelength (nm): 850

The 850nm peak wavelength makes this laser diode suitable for various applications including communications, data transmission, and industrial processes.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high efficiency and precision in converting electrical energy into coherent light, making it suitable for tasks requiring focused and intense light output.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can withstand high temperatures without compromising its performance, ensuring reliability in various operating environments.

Minimum Operating Temperature: -10 °C

The ability to operate at temperatures as low as -10 °C makes this laser diode versatile and suitable for use in colder environments without the risk of performance degradation.

Semiconductor Material: GaAlAs

The use of GaAlAs semiconductor material in this laser diode provides high efficiency, stability, and reliability in converting electricity to light, making it a durable and long-lasting choice for various applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation and integration of this laser diode into different systems or devices, making it a convenient and user-friendly option for designers and engineers.

Technical Specifications

Laser Diodes SDL8032-101 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

850

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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