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DL-3247-065

Onsemi

DL-3247-065 by Onsemi

DL-3247-065 by Onsemi is a Laser Diode with 0.05A max forward current, peak wavelength of 650nm, and 2.6V max forward voltage. It operates b/w -10 °C to 70°C, suitable for optoelectronic applications requiring precise light emission in through-hole mounting setups.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,241 parts In-Stock

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Digiode

USA . 1,052 parts In-Stock

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TANS Electronics

Latvia . 7,850 parts In-Stock

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7,850

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Problanco Electronics

Mexico . 5,416 parts In-Stock

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Kulean Microsystems

USA . 2,365 parts In-Stock

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Corphita

USA . 2,296 parts In-Stock

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SupplyDigital Components

Austria . 1,804 parts In-Stock

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Native Components

USA . 806 parts In-Stock

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Northwest PG Solutions

USA . 619 parts In-Stock

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Corohmni

South Africa . 333 parts In-Stock

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UHIMA Technologies

Türkiye . 55 parts In-Stock

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Overview

Elevate your products to the next level with the DL-3247-065 by Onsemi. As a leading manufacturer in the industry, Onsemi consistently delivers high-quality laser diodes that are essential for various applications. From industrial automation to medical devices, this laser diode offers unmatched reliability and precision. With a peak wavelength of 650nm and a maximum forward current of 0.05A, the DL-3247-065 ensures optimal performance in any environment. Trust Onsemi to provide cutting-edge technology that exceeds expectations and propels your projects to success.

Feature Benefit Bullets

Maximum Forward Current: 0.05 A

This laser diode has a low maximum forward current, which helps in conserving energy and prolonging the lifespan of the diode.

Peak Wavelength (nm): 650

The peak wavelength of 650 nm makes this laser diode suitable for applications that require precise and focused light output.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high efficiency and reliability in generating laser beams for various applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this laser diode can withstand high temperatures, making it suitable for demanding environments.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C ensures that this laser diode can function effectively even in cold environments.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount design of this laser diode allows for easy and secure installation on various surfaces or circuit boards.

Maximum Forward Voltage: 2.6 V

The relatively low maximum forward voltage of 2.6 V helps in reducing power consumption and heat generation in the circuit where the diode is used.

Technical Specifications

Laser Diodes DL-3247-065 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.05 A

Maximum Forward Voltage:

2.6 V

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

650

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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