Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1561; Maximum Forward Voltage: 1.5 V; Minimum Operating Temperature: -20 Cel;
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Laser Diodes NX8562LF606-BA-AZ attributes and parameters. Explore more Laser Diodes devices from Renesas Electronics
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Maximum Forward Voltage:
Maximum Operating Temperature:
Minimum Operating Temperature:
Optoelectronic Type:
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Semiconductor Material:
Sub-Category:
BSS138-TP
Micro Commercial Components
BSS138-TP by Micro Commercial Components is a N-channel small signal FET with a min DS breakdown voltage of 50V and max drain current of 0.22A. It is commonly used in applications requiring enhancement mode operation, such as power management and switching circuits.
1N4148
Semitronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SMBJ18CA
Zowie Technology
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Forward International Electronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Maximum Operating Temperature: 200 Cel; No. of Phases: 1;
2N7002
Nte Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .115 A; No. of Terminals: 3;
1N4148WS
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20U+
Analog Devices
DS18B20U+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
SS14
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Microsemi
2N2222A
SPC TECHNOLOGY/ MULTICOMP
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Telefunken Microelectronics
LM358AN
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
SMMBT3904LT1G
SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.
DS18B20
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Shape or Style: ROUND; Housing: PLASTIC; Output Interface Type: 1-WIRE INTERFACE;
2N7002DWH6327XTSA1
Infineon Technologies
2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.
Surge Components
Silicon Standard
MBRS340T3G
MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.
NX6309GH-AZ
Renesas Electronics
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .0000000005 s;
DL-3150-106
DL-3150-106 by Onsemi is a LASER DIODE with peak wavelength of 790nm. It has max forward current of 0.06A and max operating temp of 60 °C. Ideal for applications requiring precise laser emission in through hole mounting setups.
NX8562LB
LASER DIODE; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 1561; Minimum Operating Temperature: -40 Cel; Semiconductor Material: InGaAs; Maximum Forward Current: .3 A;
NX8570SC618D-BA-AZ
LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1561; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V;
TOLD129
Toshiba
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .08 A; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780; Maximum Operating Temperature: 50 Cel;
NX8571SC6087D-BA-A
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1609; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V;
TOLD9442M
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaInP; Maximum Forward Current: .06 A; Peak Wavelength (nm): 650; Maximum Forward Voltage: 3 V;
NX8570SC589-BA-A
LASER DIODE; Peak Wavelength (nm): 1558; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A;
DL8032-001
DL8032-001 by Onsemi is a Laser Diode with 0.2A max forward current, 830nm peak wavelength, and -10 to 50 °C operating temperature range. Ideal for applications requiring through hole mounting of LASER DIODEs in various optoelectronic systems.
SDL6030-011
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 790; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;
TOLD159
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 810; Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .115 A; Minimum Operating Temperature: -10 Cel;
TOLD124
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 780; Maximum Forward Current: .08 A; Minimum Operating Temperature: -10 Cel;
NX8567SA573-CC
LASER DIODE; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A; Minimum Operating Temperature: -5 Cel;
NX8501CG-BA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1510; Minimum Operating Temperature: 0 Cel;
NX8567SAS318-BC
LASER DIODE; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1531; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel;
SDL3034-001
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780;
NX8563LA469-CC-A
LASER DIODE; Maximum Forward Current: .3 A; Maximum Response Time: .00000000012 s; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1547; Minimum Operating Temperature: -20 Cel;
DL-3149-257
DL-3149-257 by Onsemi is a LASER DIODE with Peak Wavelength of 670nm, Max Forward Current of 0.045A, and Max Forward Voltage of 2.6V. It operates b/w -10 °C to 60°C and is mounted through hole. Ideal for applications requiring precise laser emission in various industries.
NX8570SA311-BA
LASER DIODE; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1531; Maximum Forward Voltage: 2.5 V;
TOLD323CBC
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAs; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1310;
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NX8508BE47-CC
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.6 V; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1470; Semiconductor Material: InGaAsP;
NX8501BG-BA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .2 A; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2 V;
NX8501AG-BA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 65 Cel; Maximum Forward Current: .2 A;
NX8501CC
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Semiconductor Material: InGaAsP; Minimum Operating Temperature: 0 Cel; Peak Wavelength (nm): 1510;
NX8501BC-CA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .2 A; Minimum Operating Temperature: 0 Cel; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1510;
NX8508BE49-CC
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000001 s; Semiconductor Material: InGaAsP; Maximum Forward Current: .15 A; Maximum Forward Voltage: 1.6 V;
NX8501AC-BA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: 0 Cel; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAsP;
NX8501BG-CA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1510; Semiconductor Material: InGaAsP; Maximum Forward Current: .2 A;
NX8501AG-CA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Semiconductor Material: InGaAsP; Maximum Forward Current: .2 A; Minimum Operating Temperature: 0 Cel;
NX8501CG
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1510;
NX8501CC-BA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .2 A; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP;
NX8501BC-BA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Peak Wavelength (nm): 1510; Minimum Operating Temperature: 0 Cel; Maximum Forward Current: .2 A;
NX8501CG-CA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 65 Cel; Maximum Forward Voltage: 2 V; Maximum Forward Current: .2 A;
NX8501AG
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Peak Wavelength (nm): 1510; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP;
NX8501BG
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Minimum Operating Temperature: 0 Cel; Maximum Forward Voltage: 2 V; Maximum Forward Current: .2 A;
NX8501AC
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1510; Semiconductor Material: InGaAsP; Minimum Operating Temperature: 0 Cel;
NX8501AC-CA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: 0 Cel; Peak Wavelength (nm): 1510;
NX8501BC
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAsP; Minimum Operating Temperature: 0 Cel; Peak Wavelength (nm): 1510;
NX8501CC-CA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Forward Voltage: 2 V; Semiconductor Material: InGaAsP; Maximum Forward Current: .2 A;
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