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CQF25B/D11

NXP Semiconductors

CQF25B/D11 by NXP Semiconductors

CQF25B/D11 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for data communication systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,972 parts In-Stock

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Anansix

USA . 2,653 parts In-Stock

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Digiode

USA . 1,435 parts In-Stock

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Native Components

USA . 694 parts In-Stock

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$0.195

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$0.187

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Northwest PG Solutions

USA . 1,968 parts In-Stock

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$0.214

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$0.189

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One Stop Electronics

USA . 947 parts In-Stock

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$4.100

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UNI Independent Distributors

Spain . 2,935 parts In-Stock

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Corphita

USA . 2,246 parts In-Stock

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Overview

Elevate your projects with the CQF25B/D11 laser diode from NXP Semiconductors, a trusted leader in innovative solutions. Designed for performance and reliability, this high-quality component operates efficiently across a wide temperature range, making it ideal for diverse applications—from data communication to industrial sensing. Experience exceptional response times and compact mounting features that deliver unmatched value, ensuring your designs excel in precision and durability.

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

This low maximum forward current enhances the energy efficiency of the laser diode, making it suitable for battery-operated devices.

Peak Wavelength: 850 nm

The 850 nm wavelength is ideal for a range of applications, including fiber optics and sensing, providing strong performance in data transmission.

Optoelectronic Type: LASER DIODE

As a laser diode, this product delivers coherent light, which is crucial for applications requiring precise beam control and high intensity.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this diode is reliable for use in various environments, ensuring longevity and performance stability in demanding conditions.

Minimum Operating Temperature: -10 °C

The capability to operate at temperatures as low as -10 °C ensures versatility in applications exposed to colder climates, expanding its usability.

Maximum Response Time: 0.0000000005 s

An ultra-fast response time makes this laser diode excellent for high-speed data applications, enhancing data transfer rates and reducing latency.

Semiconductor Material: AlGaAs

AlGaAs semiconductor material provides better efficiency and performance at the specified wavelength, contributing to higher output power.

Spectral Bandwidth: 4.5 nm

A narrow spectral bandwidth of 4.5 nm enables improved signal integrity and minimizes interference, making this product ideal for precise optical applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount design facilitates easy integration into a variety of circuit boards, streamlining the assembly process for manufacturers.

Maximum Forward Voltage: 2.5 V

A forward voltage of 2.5 V allows for compatibility with standard electronic components, supporting straightforward integration into electronic systems.

Technical Specifications

Laser Diodes CQF25B/D11 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

850

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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