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HL6501MG

Renesas Electronics

HL6501MG by Renesas Electronics

LASER DIODE; Mounting Feature: RADIAL MOUNT; Size: 1.6 mm; Semiconductor Material: AlGaInP; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; Additional Features: HIGH RELIABILITY;

Median Price

-

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

LIBRA Elektronik GmbH

Germany . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 820 parts In-Stock

1+ parts

$500.520

100+ parts

$490.510

1k+ parts

$485.504

10k+ parts

$480.499

820

$500.520

$490.510

$485.504

$480.499

Northwest PG Solutions

USA . 1,816 parts In-Stock

1+ parts

$550.572

100+ parts

-

1k+ parts

-

10k+ parts

-

1,816

$550.572

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-

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Technical Specifications

Laser Diodes HL6501MG attributes and parameters. Explore more Laser Diodes devices from Renesas Electronics

Specs

Additional Features:

HIGH RELIABILITY

Configuration:

SINGLE WITH BUILT-IN PHOTO DIODE

Maximum Forward Voltage:

3 V

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Nominal Output Power:

35 W

Peak Wavelength (nm):

658

Semiconductor Material:

AlGaInP

Shape:

ROUND

Size:

1.6 mm

Maximum Threshold Current:

70 mA

Manufacturer Highlights

Renesas Electronics

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