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DL-LS2003

Onsemi

DL-LS2003 by Onsemi

DL-LS2003 by Onsemi is a LASER DIODE with 785nm Peak Wavelength, 0.065A Max Forward Current, and 2.5V Max Forward Voltage. Ideal for applications requiring THROUGH HOLE MOUNT with -10 to 60 °C operating temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,347 parts In-Stock

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Digiode

USA . 410 parts In-Stock

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410

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Native Components

USA . 281 parts In-Stock

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$0.348

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$0.334

281

$0.348

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$0.334

Northwest PG Solutions

USA . 2,094 parts In-Stock

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$0.383

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$0.338

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$0.383

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$0.338

Problanco Electronics

Mexico . 5,726 parts In-Stock

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5,726

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Kulean Microsystems

USA . 2,741 parts In-Stock

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SupplyDigital Components

Austria . 2,535 parts In-Stock

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Corphita

USA . 2,047 parts In-Stock

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UHIMA Technologies

Türkiye . 606 parts In-Stock

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Corohmni

South Africa . 97 parts In-Stock

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TANS Electronics

Latvia . 86 parts In-Stock

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Overview

Experience the cutting-edge technology of the DL-LS2003 laser diode by Onsemi, a leading manufacturer known for producing high-quality optoelectronic components. This versatile diode is perfect for a wide range of applications, from industrial to medical devices. With a peak wavelength of 785nm and a maximum forward current of 0.065A, this laser diode offers unparalleled precision and reliability. Trust Onsemi to deliver superior performance and durability in every product, making the DL-LS2003 an essential component for your next project. Elevate your designs with the innovative DL-LS2003 laser diode today!

Feature Benefit Bullets

Maximum Forward Current: 0.065 A

The low forward current requirement makes this laser diode energy-efficient and suitable for applications where power consumption is a concern.

Peak Wavelength (nm): 785

The specific peak wavelength of 785nm makes this laser diode ideal for applications requiring precise and focused laser beams in that wavelength range.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers coherent and directional light output, making it suitable for various applications in fields such as telecommunications, medical devices, and industrial processes.

Maximum Operating Temperature: 60 °C

With a high maximum operating temperature of 60 °C, this laser diode can withstand elevated temperatures without compromising its performance, ensuring reliability in demanding environments.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C allows this laser diode to operate in cold environments without the risk of performance degradation, making it versatile for use in different climatic conditions.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies installation and ensures secure placement of the laser diode, enhancing stability and ease of integration into various systems or devices.

Maximum Forward Voltage: 2.5 V

The moderate forward voltage requirement of 2.5V makes this laser diode compatible with a wide range of power sources, providing flexibility in designing and powering the system it is employed in.

Technical Specifications

Laser Diodes DL-LS2003 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.065 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

785

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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