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DL-LS1045

Onsemi

DL-LS1045 by Onsemi

DL-LS1045 by Onsemi is a LASER DIODE with 0.11A max forward current, 658nm peak wavelength, and 3V max forward voltage. Ideal for applications requiring THROUGH HOLE MOUNTing, operating b/w -10 °C to 70°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,065 parts In-Stock

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Digiode

USA . 406 parts In-Stock

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Kulean Microsystems

USA . 2,338 parts In-Stock

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Problanco Electronics

Mexico . 2,120 parts In-Stock

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SupplyDigital Components

Austria . 1,983 parts In-Stock

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TANS Electronics

Latvia . 1,472 parts In-Stock

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Corohmni

South Africa . 436 parts In-Stock

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Corphita

USA . 392 parts In-Stock

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Northwest PG Solutions

USA . 284 parts In-Stock

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Native Components

USA . 268 parts In-Stock

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UHIMA Technologies

Türkiye . 210 parts In-Stock

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Overview

Experience the cutting-edge technology of the DL-LS1045 by Onsemi, a leading manufacturer in the industry. This powerful laser diode offers unmatched precision and reliability, making it perfect for a wide range of applications. From medical devices to industrial machinery, this innovative product delivers exceptional value, efficiency, and performance. Trust Onsemi to provide you with the quality and durability you need for your projects. Upgrade to the DL-LS1045 and see the difference for yourself.

Feature Benefit Bullets

Maximum Forward Current: 0.11 A

The low current allows for energy efficiency and prolonged lifespan of the laser diode.

Peak Wavelength (nm): 658

The specific wavelength of 658nm is ideal for various applications like barcode scanners, laser pointers, and optical communication.

Optoelectronic Type: LASER DIODE

Being a laser diode, it provides high monochromaticity and coherence which are crucial for applications requiring precise and focused light beams.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this laser diode can withstand heat stress and operate reliably in various environments.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature ensures functionality even in colder conditions, making it versatile for a wide range of applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount design offers easy and secure installation, enhancing the usability and stability of the laser diode.

Maximum Forward Voltage: 3 V

The low forward voltage requirement of 3V makes it compatible with a wide range of power sources, providing flexibility in integration and operation.

Technical Specifications

Laser Diodes DL-LS1045 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.11 A

Maximum Forward Voltage:

3 V

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

658

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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