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DL-LS1036

Onsemi

DL-LS1036 by Onsemi

DL-LS1036 by Onsemi is a Laser Diode with 0.11A max forward current, peak wavelength of 635nm, and 2.7V max forward voltage. Ideal for applications requiring laser diodes in temperatures ranging from -10 °C to 50°C with through hole mounting feature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 443 parts In-Stock

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443

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Digiode

USA . 311 parts In-Stock

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Native Components

USA . 691 parts In-Stock

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$0.067

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$0.064

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$0.064

Northwest PG Solutions

USA . 1,797 parts In-Stock

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$0.074

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$0.065

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$0.065

SupplyDigital Components

Austria . 6,846 parts In-Stock

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Kulean Microsystems

USA . 4,445 parts In-Stock

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Problanco Electronics

Mexico . 2,165 parts In-Stock

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TANS Electronics

Latvia . 1,963 parts In-Stock

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Corphita

USA . 1,720 parts In-Stock

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UHIMA Technologies

Türkiye . 504 parts In-Stock

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Corohmni

South Africa . 354 parts In-Stock

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Overview

Discover the DL-LS1036 by Onsemi, a top-quality laser diode that offers unparalleled performance and reliability. Manufactured by industry leader Onsemi, this product is designed for a wide range of applications, from medical devices to industrial sensors. Experience the value and benefits of this laser diode, with its high efficiency and precise output. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the DL-LS1036 and unlock new possibilities in optoelectronics.

Feature Benefit Bullets

Maximum Forward Current: 0.11 A

This high maximum forward current allows for efficient and reliable operation of the laser diode.

Peak Wavelength (nm): 635

The peak wavelength of 635nm is ideal for various applications such as laser pointers, barcode scanners, and fiber optic communication.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides a coherent light output that is useful in precision instruments and communications.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can be used in a wide range of environments without risk of overheating.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C ensures that this laser diode can also function effectively in colder conditions.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature makes installation and integration of this laser diode into a system or device much easier and more secure.

Maximum Forward Voltage: 2.7 V

The low maximum forward voltage of 2.7V helps in minimizing power consumption and ensures efficient operation of the laser diode.

Technical Specifications

Laser Diodes DL-LS1036 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.11 A

Maximum Forward Voltage:

2.7 V

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

635

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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