Loading...

DL-LS1017

Onsemi

DL-LS1017 by Onsemi

DL-LS1017 by Onsemi is a Laser Diode with 0.11A max forward current, peak wavelength of 658nm, and max operating temp of 60 °C. Ideal for applications requiring through hole mounting, it operates b/w -10°C to 60°C and has a max forward voltage of 3.5V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,490 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,490

-

-

-

-

Vyrian

USA . 601 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

601

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 3,819 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,819

-

-

-

-

SupplyDigital Components

Austria . 2,850 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,850

-

-

-

-

TANS Electronics

Latvia . 2,689 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,689

-

-

-

-

Corphita

USA . 2,438 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,438

-

-

-

-

Northwest PG Solutions

USA . 1,008 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,008

-

-

-

-

UHIMA Technologies

Türkiye . 724 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

724

-

-

-

-

Native Components

USA . 658 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

658

-

-

-

-

Problanco Electronics

Mexico . 599 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

599

-

-

-

-

Corohmni

South Africa . 381 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

381

-

-

-

-

Overview

Unleash the power of precision with the DL-LS1017 laser diode by Onsemi. Known for their top-quality manufacturing, Onsemi delivers cutting-edge technology that guarantees superior performance and reliability. Ideal for a wide range of applications, this laser diode offers unparalleled value with its high efficiency and precise wavelength output. Elevate your projects to the next level with the DL-LS1017 and experience the benefits of advanced optoelectronics technology at your fingertips.

Feature Benefit Bullets

Maximum Forward Current: 0.11 A

The low maximum forward current ensures efficient power usage and helps prolong the lifespan of the laser diode.

Peak Wavelength (nm): 658

The specific peak wavelength of 658 nm makes this laser diode suitable for various applications including telecommunications and medical equipment.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides a coherent and concentrated beam of light, making it ideal for applications like laser pointers and barcode scanners.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can function reliably even in environments with elevated temperatures.

Minimum Operating Temperature: -10 °C

The wide range of operating temperatures from -10 °C to 60°C makes this laser diode versatile and suitable for use in various environmental conditions.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides a secure and stable attachment for the laser diode, ensuring proper alignment and ease of installation.

Maximum Forward Voltage: 3.5 V

The low maximum forward voltage of 3.5 V means that this laser diode is energy-efficient and can be powered using standard electrical sources.

Technical Specifications

Laser Diodes DL-LS1017 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.11 A

Maximum Forward Voltage:

3.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

658

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20